Investigation of significantly high barrier height in Cu/GaN Schottky diode
Current-voltage (I-V) measurements combined with analytical calculations have been used to explain mechanisms for forward-bias current flow in Copper (Cu) Schottky diodes fabricated on Gallium Nitride (GaN) epitaxial films. An ideality factor of 1.7 was found at room temperature (RT), which indicate...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4939936 |