A Unified Channel Charges Expression for Analytic MOSFET Modeling

A Unified Channel Charges Expression for Analytic MOSFET Modeling

Based on a 1D Poissons equation resolution, we present an analytic model of inversion charges allowing calculation of the drain current and transconductance in the Metal Oxide Semiconductor Field Effect Transistor. The drain current and transconductance are described by analytical functions includin...

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Bibliographic Details
Main Authors: Hugues Murray, Patrick Martin
Format: Article
Language:English
Published: Hindawi Limited 2012-01-01
Series:Active and Passive Electronic Components
Online Access:http://dx.doi.org/10.1155/2012/652478
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spelling doaj-4c370dbca6c0446fb4f43d8d7d6be2fe2020-11-25T00:31:59ZengHindawi LimitedActive and Passive Electronic Components0882-75161563-50312012-01-01201210.1155/2012/652478652478A Unified Channel Charges Expression for Analytic MOSFET ModelingHugues Murray0Patrick Martin1Normandie Université, Ensicaen, UMR 6508, LaMIPS, Laboratoire Commun CNRS-NXP-PRESTO-ENSICAEN UCBN, 6 boulevard Maréchal Juin, 14050 CAEN Cedex 4, FranceNormandie Université, Ensicaen, UMR 6508, LaMIPS, Laboratoire Commun CNRS-NXP-PRESTO-ENSICAEN UCBN, 6 boulevard Maréchal Juin, 14050 CAEN Cedex 4, FranceBased on a 1D Poissons equation resolution, we present an analytic model of inversion charges allowing calculation of the drain current and transconductance in the Metal Oxide Semiconductor Field Effect Transistor. The drain current and transconductance are described by analytical functions including mobility corrections and short channel effects (CLM, DIBL). The comparison with the Pao-Sah integral shows excellent accuracy of the model in all inversion modes from strong to weak inversion in submicronics MOSFET. All calculations are encoded with a simple C program and give instantaneous results that provide an efficient tool for microelectronics users.http://dx.doi.org/10.1155/2012/652478
collection DOAJ
language English
format Article
sources DOAJ
author Hugues Murray
Patrick Martin
spellingShingle Hugues Murray
Patrick Martin
A Unified Channel Charges Expression for Analytic MOSFET Modeling
Active and Passive Electronic Components
author_facet Hugues Murray
Patrick Martin
author_sort Hugues Murray
title A Unified Channel Charges Expression for Analytic MOSFET Modeling
title_short A Unified Channel Charges Expression for Analytic MOSFET Modeling
title_full A Unified Channel Charges Expression for Analytic MOSFET Modeling
title_fullStr A Unified Channel Charges Expression for Analytic MOSFET Modeling
title_full_unstemmed A Unified Channel Charges Expression for Analytic MOSFET Modeling
title_sort unified channel charges expression for analytic mosfet modeling
publisher Hindawi Limited
series Active and Passive Electronic Components
issn 0882-7516
1563-5031
publishDate 2012-01-01
description Based on a 1D Poissons equation resolution, we present an analytic model of inversion charges allowing calculation of the drain current and transconductance in the Metal Oxide Semiconductor Field Effect Transistor. The drain current and transconductance are described by analytical functions including mobility corrections and short channel effects (CLM, DIBL). The comparison with the Pao-Sah integral shows excellent accuracy of the model in all inversion modes from strong to weak inversion in submicronics MOSFET. All calculations are encoded with a simple C program and give instantaneous results that provide an efficient tool for microelectronics users.
url http://dx.doi.org/10.1155/2012/652478
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AT patrickmartin aunifiedchannelchargesexpressionforanalyticmosfetmodeling
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AT patrickmartin unifiedchannelchargesexpressionforanalyticmosfetmodeling
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