Interface-dependent rectifying TbMnO3-based heterojunctions
We report the fabrication and characterizations of oxide heterojunctions composed of TbMnO3 thin films grown on conducting Nb:SrTiO3 substrates. The heterojunctions exhibit rich rectifying characteristics, depending on not only the measurement temperature but also the growth temperature: at 300 K, g...
Main Authors: | Yimin Cui, Yufeng Tian, Wei Liu, Yongfeng Li, Rongming Wang, Tom Wu |
---|---|
Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2011-12-01
|
Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.3660322 |
Similar Items
-
Dielectric properties of TbMnO3 ceramics doped with Bi and Fe ions
by: Jianxun Xu, et al.
Published: (2016-01-01) -
Study of magnetic and dielectric properties of doped TbMnO3
by: Shiu-Jyun Hsu, et al.
Published: (2015) -
Synthesis and Characterization of Chemical – Substituted TbMnO3 Magnetic Oxide
by: Yi-Hao Lien, et al.
Published: (2005) -
Lattice-mediated magnetic order melting in TbMnO[subscript 3]
by: Baldini, Edoardo, et al.
Published: (2018) -
Study of impedance and dielectric properties of rare-earth doped TbMnO3
by: WANG, WEI-PANG, et al.
Published: (2018)