Investigation of the properties of a 3-level broadband antireflective structure on silicon by THz time-domain spectroscopy

Investigation of the properties of a 3-level broadband antireflective structure on silicon by THz time-domain spectroscopy

Bibliographic Details
Main Authors:	Tzibizov I.A., Kropotov G.I., Pavelyev V.S., Tukmakov K.N., Reshetnikov A.S.
Format:	Article
Language:	English
Published:	EDP Sciences 2018-01-01
Series:	EPJ Web of Conferences
Online Access:	https://doi.org/10.1051/epjconf/201819506016

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