Investigation of the properties of a 3-level broadband antireflective structure on silicon by THz time-domain spectroscopy

Bibliographic Details
Main Authors:	Tzibizov I.A., Kropotov G.I., Pavelyev V.S., Tukmakov K.N., Reshetnikov A.S.
Format:	Article
Language:	English
Published:	EDP Sciences 2018-01-01
Series:	EPJ Web of Conferences
Online Access:	https://doi.org/10.1051/epjconf/201819506016

id	doaj-4b6cae81cb6e4d65bd18e1dbc0196808
record_format	Article
spelling	doaj-4b6cae81cb6e4d65bd18e1dbc01968082021-08-02T05:04:07ZengEDP SciencesEPJ Web of Conferences2100-014X2018-01-011950601610.1051/epjconf/201819506016epjconf_tera2018_06016Investigation of the properties of a 3-level broadband antireflective structure on silicon by THz time-domain spectroscopyTzibizov I.A.0Kropotov G.I.1Pavelyev V.S.Tukmakov K.N.Reshetnikov A.S.2Tydex LLCTydex LLCSamara Universityhttps://doi.org/10.1051/epjconf/201819506016
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Tzibizov I.A. Kropotov G.I. Pavelyev V.S. Tukmakov K.N. Reshetnikov A.S.
spellingShingle	Tzibizov I.A. Kropotov G.I. Pavelyev V.S. Tukmakov K.N. Reshetnikov A.S. Investigation of the properties of a 3-level broadband antireflective structure on silicon by THz time-domain spectroscopy EPJ Web of Conferences
author_facet	Tzibizov I.A. Kropotov G.I. Pavelyev V.S. Tukmakov K.N. Reshetnikov A.S.
author_sort	Tzibizov I.A.
title	Investigation of the properties of a 3-level broadband antireflective structure on silicon by THz time-domain spectroscopy
title_short	Investigation of the properties of a 3-level broadband antireflective structure on silicon by THz time-domain spectroscopy
title_full	Investigation of the properties of a 3-level broadband antireflective structure on silicon by THz time-domain spectroscopy
title_fullStr	Investigation of the properties of a 3-level broadband antireflective structure on silicon by THz time-domain spectroscopy
title_full_unstemmed	Investigation of the properties of a 3-level broadband antireflective structure on silicon by THz time-domain spectroscopy
title_sort	investigation of the properties of a 3-level broadband antireflective structure on silicon by thz time-domain spectroscopy
publisher	EDP Sciences
series	EPJ Web of Conferences
issn	2100-014X
publishDate	2018-01-01
url	https://doi.org/10.1051/epjconf/201819506016
work_keys_str_mv	AT tzibizovia investigationofthepropertiesofa3levelbroadbandantireflectivestructureonsiliconbythztimedomainspectroscopy AT kropotovgi investigationofthepropertiesofa3levelbroadbandantireflectivestructureonsiliconbythztimedomainspectroscopy AT pavelyevvs investigationofthepropertiesofa3levelbroadbandantireflectivestructureonsiliconbythztimedomainspectroscopy AT tukmakovkn investigationofthepropertiesofa3levelbroadbandantireflectivestructureonsiliconbythztimedomainspectroscopy AT reshetnikovas investigationofthepropertiesofa3levelbroadbandantireflectivestructureonsiliconbythztimedomainspectroscopy
_version_	1721241570636726272

Investigation of the properties of a 3-level broadband antireflective structure on silicon by THz time-domain spectroscopy

Similar Items