A Single Eu-Doped In2O3 Nanobelt Device for Selective H2S Detection

• Main Authors: Weiwu Chen, Yingkai Liu, Zhaojun Qin, Yuemei Wu, Shuanghui Li, Peng Ai
• Format: Article
• Language: English
• Published: MDPI AG 2015-11-01
• Series: Sensors
• Subjects: Eu-doped In2O3; single nanobelt; gas sensor; H2S
• Online Access: http://www.mdpi.com/1424-8220/15/12/29775

Eu-doped In2O3 nanobelts (Eu-In2O3 NBs) and pure In2O3 nanobelts (In2O3 NBs) are synthesized by the carbon thermal reduction method. Single nanobelt sensors are fabricated via an ion beam deposition system with a mesh-grid mask. The gas-sensing response properties of the Eu-In2O3 NB device and its undoped counterpart are investigated with several kinds of gases (including H2S, CO, NO2, HCHO, and C2H5OH) at different concentrations and different temperatures. It is found that the response of the Eu-In2O3 NB device to 100 ppm of H2S is the best among these gases and the sensitivity reaches 5.74, which is five times that of pure In2O3 NB at 260 °C. We also found that the former has an excellent sensitive response and great selectivity to H2S compared to the latter. Besides, there is a linear relationship between the response and H2S concentration when its concentration changes from 5 to 100 ppm and from 100 to 1000 ppm. The response/recovery time is quite short and remains stable with an increase of H2S concentration. These results mean that the doping of Eu can improve the gas-sensing performance of In2O3 NB effectually.