X-ray Photoelectron Spectroscopy Analysis of Nitrogen-Doped TiO<sub>2</sub> Films Prepared by Reactive-Ion-Beam Sputtering with Various NH<sub>3</sub>/O<sub>2</sub> Gas Mixture Ratios

X-ray Photoelectron Spectroscopy Analysis of Nitrogen-Doped TiO<sub>2</sub> Films Prepared by Reactive-Ion-Beam Sputtering with Various NH<sub>3</sub>/O<sub>2</sub> Gas Mixture Ratios

Nitrogen-doped TiO<sub>2</sub> films were prepared by reactive ion-beam sputtering deposition (IBSD) in a mixed atmosphere of NH<sub>3</sub> and O<sub>2</sub> at a substrate temperature of 400 &#176;C. X-ray photoelectron spectra revealed the presence of six i...

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Bibliographic Details
Main Authors: Jin-Cherng Hsu, Yung-Hsin Lin, Paul W. Wang
Format: Article
Language:English
Published: MDPI AG 2020-01-01
Series:Coatings
Subjects:
nitrogen-doped tio<sub>2</sub>
tauc–lorentz model
nh<sub>3</sub>/o<sub>2</sub> gas mixture
bandgap narrowing
Online Access:https://www.mdpi.com/2079-6412/10/1/47

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https://www.mdpi.com/2079-6412/10/1/47

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