Modeling and Simulation of Special Shaped SOI Materials for the Nanodevices Implementation
In the industrial chain of the nanomaterials for electronic devices, a main stage is represented by the wafer characterization. This paper is starting from a standard SOI wafer with 200 nm film thickness and is proposing two directions for the SOI materials miniaturization, indexing the static chara...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2011-01-01
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| Series: | Journal of Nanomaterials |
| Online Access: | http://dx.doi.org/10.1155/2011/792759 |
| Summary: | In the industrial chain of the nanomaterials for electronic devices, a main stage is represented by the wafer characterization. This paper is starting from a standard SOI wafer with 200 nm film thickness and is proposing two directions for the SOI materials miniaturization, indexing the static characteristics by simulation. The first SOI nanomaterial is a sub-10 nm Si-film with a rectangular shape. The influence of the buried interface fixed charges has to be approached by the distribution theory. The second proposal studies the influence of the vacuum cavity in a “U” shaped SOI nanofilm. In all cases, with rectangular or “U” shape film, the simulations reveal transfer characteristics with a maximum and output characteristics with a minimum for sub-10 nm thickness of the SOI film. |
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| ISSN: | 1687-4110 1687-4129 |