Interface and optical properties of Zn1−xMgxO films with Mg content of more than 70% grown on the (12̄10)-ZnO substrates

Fabricating Zn1−xMgxO films with a high Mg content is key to their applications in deep-ultraviolet optoelectronic devices. In this work, we report the preparation of Zn1−xMgxO films on (12̄10)-ZnO substrates by molecular beam epitaxy. The Zn1−xMgxO/(12̄10)-ZnO structure is revealed by x-ray diffrac...

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Main Authors:	Xin Liang, Hua Zhou, Hui-Qiong Wang, Lihua Zhang, Kim Kisslinger, Junyong Kang
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2021-07-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/5.0048110

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spelling	doaj-4ae536bcd19f4271937b2df262498c582021-08-04T13:18:52ZengAIP Publishing LLCAIP Advances2158-32262021-07-01117075217075217-510.1063/5.0048110Interface and optical properties of Zn1−xMgxO films with Mg content of more than 70% grown on the (12̄10)-ZnO substratesXin Liang0Hua Zhou1Hui-Qiong Wang2Lihua Zhang3Kim Kisslinger4Junyong Kang5Key Laboratory of Semiconductors and Applications of Fujian Province, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, People’s Republic of ChinaSchool of Physics, Shandong University, Jinan 250100, People’s Republic of ChinaKey Laboratory of Semiconductors and Applications of Fujian Province, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, People’s Republic of ChinaCenter for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, USACenter for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, USAKey Laboratory of Semiconductors and Applications of Fujian Province, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, People’s Republic of ChinaFabricating Zn1−xMgxO films with a high Mg content is key to their applications in deep-ultraviolet optoelectronic devices. In this work, we report the preparation of Zn1−xMgxO films on (12̄10)-ZnO substrates by molecular beam epitaxy. The Zn1−xMgxO/(12̄10)-ZnO structure is revealed by x-ray diffraction and high-resolution transmission electron microscopy. Remarkably, no cubic MgO is observed for films with 74.6% Mg content; the film shows mainly the wurtzite structure with some intermediate phases at the interface. Photoluminescence spectra show that the film exhibits good optoelectronic properties with a bandgap of 4.6 eV. This work provides a new avenue for the fabrication of deep-ultraviolet Zn1−xMgxO films.http://dx.doi.org/10.1063/5.0048110
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Xin Liang Hua Zhou Hui-Qiong Wang Lihua Zhang Kim Kisslinger Junyong Kang
spellingShingle	Xin Liang Hua Zhou Hui-Qiong Wang Lihua Zhang Kim Kisslinger Junyong Kang Interface and optical properties of Zn1−xMgxO films with Mg content of more than 70% grown on the (12̄10)-ZnO substrates AIP Advances
author_facet	Xin Liang Hua Zhou Hui-Qiong Wang Lihua Zhang Kim Kisslinger Junyong Kang
author_sort	Xin Liang
title	Interface and optical properties of Zn1−xMgxO films with Mg content of more than 70% grown on the (12̄10)-ZnO substrates
title_short	Interface and optical properties of Zn1−xMgxO films with Mg content of more than 70% grown on the (12̄10)-ZnO substrates
title_full	Interface and optical properties of Zn1−xMgxO films with Mg content of more than 70% grown on the (12̄10)-ZnO substrates
title_fullStr	Interface and optical properties of Zn1−xMgxO films with Mg content of more than 70% grown on the (12̄10)-ZnO substrates
title_full_unstemmed	Interface and optical properties of Zn1−xMgxO films with Mg content of more than 70% grown on the (12̄10)-ZnO substrates
title_sort	interface and optical properties of zn1−xmgxo films with mg content of more than 70% grown on the (12̄10)-zno substrates
publisher	AIP Publishing LLC
series	AIP Advances
issn	2158-3226
publishDate	2021-07-01
description	Fabricating Zn1−xMgxO films with a high Mg content is key to their applications in deep-ultraviolet optoelectronic devices. In this work, we report the preparation of Zn1−xMgxO films on (12̄10)-ZnO substrates by molecular beam epitaxy. The Zn1−xMgxO/(12̄10)-ZnO structure is revealed by x-ray diffraction and high-resolution transmission electron microscopy. Remarkably, no cubic MgO is observed for films with 74.6% Mg content; the film shows mainly the wurtzite structure with some intermediate phases at the interface. Photoluminescence spectra show that the film exhibits good optoelectronic properties with a bandgap of 4.6 eV. This work provides a new avenue for the fabrication of deep-ultraviolet Zn1−xMgxO films.
url	http://dx.doi.org/10.1063/5.0048110
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Interface and optical properties of Zn1−xMgxO films with Mg content of more than 70% grown on the (12̄10)-ZnO substrates

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