Nanofabrications of T shape gates for high electron mobility transistors in microwaves and THz waves, a review
High electron mobility transistors (HEMTs) are the basic building block in microwave monolithic integration circuits (MMICs) for broad applications in micrometer (0.3–100 GHz), millimeter (100–300 GHz) and tera [1] hertz (300 GHz–10 THz) wave. The key part in HEMT is the nanoscale T shape gates whos...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2021-11-01
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| Series: | Micro and Nano Engineering |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590007221000125 |