Electrooptical Characterization of New Classes of Silicon Carbide UV Photodetectors

In this paper, we present the fabrication process steps and the characterization of 4H-SiC vertical Schottky UV detectors, where interdigitated strips, acting as top metal contacts, have been realized in Ni<sub>2</sub>Si. These devices exploit the pinch-off surface effect. I-V and C-V ch...

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Bibliographic Details
Main Authors: G. Adamo, A. Tomasino, A. Parisi, D. Agro, S. Stivala, L. Curcio, A. Ando, R. Pernice, C. Giaconia, A. C. Busacca, M. C. Mazzillo, D. Sanfilippo, G. Fallica
Format: Article
Language:English
Published: IEEE 2014-01-01
Series:IEEE Photonics Journal
Online Access:https://ieeexplore.ieee.org/document/6887321/

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