Electrooptical Characterization of New Classes of Silicon Carbide UV Photodetectors

In this paper, we present the fabrication process steps and the characterization of 4H-SiC vertical Schottky UV detectors, where interdigitated strips, acting as top metal contacts, have been realized in Ni<sub>2</sub>Si. These devices exploit the pinch-off surface effect. I-V and C-V ch...

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Main Authors:	G. Adamo, A. Tomasino, A. Parisi, D. Agro, S. Stivala, L. Curcio, A. Ando, R. Pernice, C. Giaconia, A. C. Busacca, M. C. Mazzillo, D. Sanfilippo, G. Fallica
Format:	Article
Language:	English
Published:	IEEE 2014-01-01
Series:	IEEE Photonics Journal
Online Access:	https://ieeexplore.ieee.org/document/6887321/

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spelling	doaj-4a3fc3c6df1546c5ab38d52aaf0229c32021-03-29T17:20:43ZengIEEEIEEE Photonics Journal1943-06552014-01-01661710.1109/JPHOT.2014.23526116887321Electrooptical Characterization of New Classes of Silicon Carbide UV PhotodetectorsG. Adamo0A. Tomasino1A. Parisi2D. Agro3S. Stivala4L. Curcio5A. Ando6R. Pernice7C. Giaconia8A. C. Busacca9M. C. Mazzillo10D. Sanfilippo11G. Fallica12Dipt. di Energia, Ing. Dell'Inf. e Modelli Matematici, Univ. of Palermo, Palermo, ItalyDipt. di Energia, Ing. Dell'Inf. e Modelli Matematici, Univ. of Palermo, Palermo, ItalyDipt. di Energia, Ing. Dell'Inf. e Modelli Matematici, Univ. of Palermo, Palermo, ItalyDipt. di Energia, Ing. Dell'Inf. e Modelli Matematici, Univ. of Palermo, Palermo, ItalyDipt. di Energia, Ing. Dell'Inf. e Modelli Matematici, Univ. of Palermo, Palermo, ItalyDipt. di Energia, Ing. Dell'Inf. e Modelli Matematici, Univ. of Palermo, Palermo, ItalyDipt. di Energia, Ing. Dell'Inf. e Modelli Matematici, Univ. of Palermo, Palermo, ItalyDipt. di Energia, Ing. Dell'Inf. e Modelli Matematici, Univ. of Palermo, Palermo, ItalyDipt. di Energia, Ing. Dell'Inf. e Modelli Matematici, Univ. of Palermo, Palermo, ItalyDipt. di Energia, Ing. Dell'Inf. e Modelli Matematici, Univ. of Palermo, Palermo, ItalyR&D IMS, STMicroelectron., Catania, ItalyR&D IMS, STMicroelectron., Catania, ItalyR&D IMS, STMicroelectron., Catania, ItalyIn this paper, we present the fabrication process steps and the characterization of 4H-SiC vertical Schottky UV detectors, where interdigitated strips, acting as top metal contacts, have been realized in Ni<sub>2</sub>Si. These devices exploit the pinch-off surface effect. I-V and C-V characteristics, as functions of temperature, were measured in dark conditions. In addition, we have carried out responsivity measurements, for wavelengths ranging from 200 to 400 nm, at varying package temperature and applied reverse bias. A comparison among devices having different strip pitch sizes has been performed, thus finding out that the 10-μm pitch class demonstrates the top performances as regards the tradeoff between exposed surface area and complete merge of adjacent depleted regions under top contacts.https://ieeexplore.ieee.org/document/6887321/
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	G. Adamo A. Tomasino A. Parisi D. Agro S. Stivala L. Curcio A. Ando R. Pernice C. Giaconia A. C. Busacca M. C. Mazzillo D. Sanfilippo G. Fallica
spellingShingle	G. Adamo A. Tomasino A. Parisi D. Agro S. Stivala L. Curcio A. Ando R. Pernice C. Giaconia A. C. Busacca M. C. Mazzillo D. Sanfilippo G. Fallica Electrooptical Characterization of New Classes of Silicon Carbide UV Photodetectors IEEE Photonics Journal
author_facet	G. Adamo A. Tomasino A. Parisi D. Agro S. Stivala L. Curcio A. Ando R. Pernice C. Giaconia A. C. Busacca M. C. Mazzillo D. Sanfilippo G. Fallica
author_sort	G. Adamo
title	Electrooptical Characterization of New Classes of Silicon Carbide UV Photodetectors
title_short	Electrooptical Characterization of New Classes of Silicon Carbide UV Photodetectors
title_full	Electrooptical Characterization of New Classes of Silicon Carbide UV Photodetectors
title_fullStr	Electrooptical Characterization of New Classes of Silicon Carbide UV Photodetectors
title_full_unstemmed	Electrooptical Characterization of New Classes of Silicon Carbide UV Photodetectors
title_sort	electrooptical characterization of new classes of silicon carbide uv photodetectors
publisher	IEEE
series	IEEE Photonics Journal
issn	1943-0655
publishDate	2014-01-01
description	In this paper, we present the fabrication process steps and the characterization of 4H-SiC vertical Schottky UV detectors, where interdigitated strips, acting as top metal contacts, have been realized in Ni<sub>2</sub>Si. These devices exploit the pinch-off surface effect. I-V and C-V characteristics, as functions of temperature, were measured in dark conditions. In addition, we have carried out responsivity measurements, for wavelengths ranging from 200 to 400 nm, at varying package temperature and applied reverse bias. A comparison among devices having different strip pitch sizes has been performed, thus finding out that the 10-μm pitch class demonstrates the top performances as regards the tradeoff between exposed surface area and complete merge of adjacent depleted regions under top contacts.
url	https://ieeexplore.ieee.org/document/6887321/
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Electrooptical Characterization of New Classes of Silicon Carbide UV Photodetectors

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