| Summary: | The electronic structure and the corresponding electrical conductive behavior of the Cu/Cr<sub>2</sub>C/TiN stack were assessed according to a newly developed first-principle model based on density functional theory. Using an additional Cr<sub>2</sub>C layer provides the metal-like characteristic of the Cu/Cr<sub>2</sub>C/TiN stack with much larger electrical conduction coefficients (i.e., mobility, diffusivity, and electrical conductivity) than the conventional Ag/Ti<sub>3</sub>C<sub>2</sub>/Pt stack due to the lower activation energy. This device is therefore capable of offering faster switching speeds, lower programming voltage, and better stability and durability than the memristor device with conventional Ti<sub>3</sub>C<sub>2</sub> MXene.
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