Novel Driving Methods of Gate Driver for Enhancement- and Depletion-Mode Oxide TFTs

Novel Driving Methods of Gate Driver for Enhancement- and Depletion-Mode Oxide TFTs

This paper introduces novel driving methods of the pull-down unit in a gate driver circuit for enhancement- and depletion-mode a-IGZO thin-film transistors (TFTs). The proposed gate driver circuit can achieve uniform output characteristics and effectively reduce the V<sub>OUT</sub> rippl...

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Bibliographic Details
Main Authors: Jongsu Oh, Kyung-Mo Jung, Eun Kyo Jung, Jungwoo Lee, Soo-Yeon Lee, Keechan Park, Jae-Hong Jeon, Yong-Sang Kim
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
a-IGZO TFT
gate driver circuit
pull-down unit
enhancement mode
depletion mode
threshold voltage
Online Access:https://ieeexplore.ieee.org/document/8947924/

Internet

https://ieeexplore.ieee.org/document/8947924/

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