Performance of arsenene and antimonene double-gate MOSFETs from first principles
The family of two-dimensional materials is ever growing, and theoretical calculations are a useful tool to predict the suitability of emerging monolayers for electronic applications. Here, the authors perform accurate simulations of complete field-effect devices based on arsenene and antimonene.
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Publishing Group
2016-08-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/ncomms12585 |