Performance of arsenene and antimonene double-gate MOSFETs from first principles
The family of two-dimensional materials is ever growing, and theoretical calculations are a useful tool to predict the suitability of emerging monolayers for electronic applications. Here, the authors perform accurate simulations of complete field-effect devices based on arsenene and antimonene.
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2016-08-01
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Series: | Nature Communications |
Online Access: | https://doi.org/10.1038/ncomms12585 |
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doaj-49ae8650ef164d33965db1e2de9c405b2021-05-11T11:19:39ZengNature Publishing GroupNature Communications2041-17232016-08-01711910.1038/ncomms12585Performance of arsenene and antimonene double-gate MOSFETs from first principlesGiovanni Pizzi0Marco Gibertini1Elias Dib2Nicola Marzari3Giuseppe Iannaccone4Gianluca Fiori5Theory and Simulation of Materials (THEOS) and National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de LausanneTheory and Simulation of Materials (THEOS) and National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de LausanneDipartimento di Ingegneria dell’Informazione, University of PisaTheory and Simulation of Materials (THEOS) and National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de LausanneDipartimento di Ingegneria dell’Informazione, University of PisaDipartimento di Ingegneria dell’Informazione, University of PisaThe family of two-dimensional materials is ever growing, and theoretical calculations are a useful tool to predict the suitability of emerging monolayers for electronic applications. Here, the authors perform accurate simulations of complete field-effect devices based on arsenene and antimonene.https://doi.org/10.1038/ncomms12585 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Giovanni Pizzi Marco Gibertini Elias Dib Nicola Marzari Giuseppe Iannaccone Gianluca Fiori |
spellingShingle |
Giovanni Pizzi Marco Gibertini Elias Dib Nicola Marzari Giuseppe Iannaccone Gianluca Fiori Performance of arsenene and antimonene double-gate MOSFETs from first principles Nature Communications |
author_facet |
Giovanni Pizzi Marco Gibertini Elias Dib Nicola Marzari Giuseppe Iannaccone Gianluca Fiori |
author_sort |
Giovanni Pizzi |
title |
Performance of arsenene and antimonene double-gate MOSFETs from first principles |
title_short |
Performance of arsenene and antimonene double-gate MOSFETs from first principles |
title_full |
Performance of arsenene and antimonene double-gate MOSFETs from first principles |
title_fullStr |
Performance of arsenene and antimonene double-gate MOSFETs from first principles |
title_full_unstemmed |
Performance of arsenene and antimonene double-gate MOSFETs from first principles |
title_sort |
performance of arsenene and antimonene double-gate mosfets from first principles |
publisher |
Nature Publishing Group |
series |
Nature Communications |
issn |
2041-1723 |
publishDate |
2016-08-01 |
description |
The family of two-dimensional materials is ever growing, and theoretical calculations are a useful tool to predict the suitability of emerging monolayers for electronic applications. Here, the authors perform accurate simulations of complete field-effect devices based on arsenene and antimonene. |
url |
https://doi.org/10.1038/ncomms12585 |
work_keys_str_mv |
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