Performance of arsenene and antimonene double-gate MOSFETs from first principles

The family of two-dimensional materials is ever growing, and theoretical calculations are a useful tool to predict the suitability of emerging monolayers for electronic applications. Here, the authors perform accurate simulations of complete field-effect devices based on arsenene and antimonene.

Bibliographic Details
Main Authors: Giovanni Pizzi, Marco Gibertini, Elias Dib, Nicola Marzari, Giuseppe Iannaccone, Gianluca Fiori
Format: Article
Language:English
Published: Nature Publishing Group 2016-08-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/ncomms12585
id doaj-49ae8650ef164d33965db1e2de9c405b
record_format Article
spelling doaj-49ae8650ef164d33965db1e2de9c405b2021-05-11T11:19:39ZengNature Publishing GroupNature Communications2041-17232016-08-01711910.1038/ncomms12585Performance of arsenene and antimonene double-gate MOSFETs from first principlesGiovanni Pizzi0Marco Gibertini1Elias Dib2Nicola Marzari3Giuseppe Iannaccone4Gianluca Fiori5Theory and Simulation of Materials (THEOS) and National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de LausanneTheory and Simulation of Materials (THEOS) and National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de LausanneDipartimento di Ingegneria dell’Informazione, University of PisaTheory and Simulation of Materials (THEOS) and National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de LausanneDipartimento di Ingegneria dell’Informazione, University of PisaDipartimento di Ingegneria dell’Informazione, University of PisaThe family of two-dimensional materials is ever growing, and theoretical calculations are a useful tool to predict the suitability of emerging monolayers for electronic applications. Here, the authors perform accurate simulations of complete field-effect devices based on arsenene and antimonene.https://doi.org/10.1038/ncomms12585
collection DOAJ
language English
format Article
sources DOAJ
author Giovanni Pizzi
Marco Gibertini
Elias Dib
Nicola Marzari
Giuseppe Iannaccone
Gianluca Fiori
spellingShingle Giovanni Pizzi
Marco Gibertini
Elias Dib
Nicola Marzari
Giuseppe Iannaccone
Gianluca Fiori
Performance of arsenene and antimonene double-gate MOSFETs from first principles
Nature Communications
author_facet Giovanni Pizzi
Marco Gibertini
Elias Dib
Nicola Marzari
Giuseppe Iannaccone
Gianluca Fiori
author_sort Giovanni Pizzi
title Performance of arsenene and antimonene double-gate MOSFETs from first principles
title_short Performance of arsenene and antimonene double-gate MOSFETs from first principles
title_full Performance of arsenene and antimonene double-gate MOSFETs from first principles
title_fullStr Performance of arsenene and antimonene double-gate MOSFETs from first principles
title_full_unstemmed Performance of arsenene and antimonene double-gate MOSFETs from first principles
title_sort performance of arsenene and antimonene double-gate mosfets from first principles
publisher Nature Publishing Group
series Nature Communications
issn 2041-1723
publishDate 2016-08-01
description The family of two-dimensional materials is ever growing, and theoretical calculations are a useful tool to predict the suitability of emerging monolayers for electronic applications. Here, the authors perform accurate simulations of complete field-effect devices based on arsenene and antimonene.
url https://doi.org/10.1038/ncomms12585
work_keys_str_mv AT giovannipizzi performanceofarseneneandantimonenedoublegatemosfetsfromfirstprinciples
AT marcogibertini performanceofarseneneandantimonenedoublegatemosfetsfromfirstprinciples
AT eliasdib performanceofarseneneandantimonenedoublegatemosfetsfromfirstprinciples
AT nicolamarzari performanceofarseneneandantimonenedoublegatemosfetsfromfirstprinciples
AT giuseppeiannaccone performanceofarseneneandantimonenedoublegatemosfetsfromfirstprinciples
AT gianlucafiori performanceofarseneneandantimonenedoublegatemosfetsfromfirstprinciples
_version_ 1721446630352224256