Output-Conductance Transition-Free Method for Improving Radio-Frequency Linearity of SOI MOSFET Circuits
In this article, a novel concept is introduced to improve the radio frequency (RF) linearity of partially-depleted (PD) silicon-on-insulator (SOI) MOSFET circuits. The transition due to the non-zero body resistance (RBody) in output conductance of PD SOI devices leads to linearity degradation. A r...
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| Format: | Article |
| Language: | English |
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Iran University of Science and Technology
2013-09-01
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| Series: | Iranian Journal of Electrical and Electronic Engineering |
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| Online Access: | http://ijeee.iust.ac.ir/browse.php?a_code=A-10-950-1&slc_lang=en&sid=1 |