Polarity dependent DC resistance degradation and electrical breakdown in Nb doped PZT films
The role of interfacial defect chemistry in time dependent breakdown and associated charge transport mechanisms was investigated for Pb0.99(Zr0.52Ti0.48)0.98Nb0.02O3 (PNZT) films. Electrical degradation was strongly dependent on the sign of the electric field; a significant increase in the median ti...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-12-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5115391 |