Electromagnetic Analysis of Vertical Resistive Memory with a Sub-nm Thick Electrode

Electromagnetic Analysis of Vertical Resistive Memory with a Sub-nm Thick Electrode

Resistive random access memories (RRAMs) are a type of resistive memory with two metal electrodes and a semi-insulating switching material in-between. As the persistent technology node downscaling continues in transistor technologies, RRAM designers also face similar device scaling challenges in sim...

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Bibliographic Details
Main Authors: Batyrbek Alimkhanuly, Sanghoek Kim, Lok-won Kim, Seunghyun Lee
Format: Article
Language:English
Published: MDPI AG 2020-08-01
Series:Nanomaterials
Subjects:
memory
VRRAM
sub-nm thin electrode
graphene
EM analysis
device modeling
Online Access:https://www.mdpi.com/2079-4991/10/9/1634

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