Design and Analysis of <i>f</i><sub>T</sub>-Doubler-Based RF Amplifiers in SiGe HBT Technology
For performance-driven systems such as space-based applications, it is important to maximize the gain of radio-frequency amplifiers (RFAs) with a certain tolerance against radiation, temperature effects, and small form factor. In this work, we present a K-band, compact high-gain RFA using an <i&g...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-05-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/9/5/772 |