Punch-Through-Stopper Free Nanosheet FETs With Crescent Inner-Spacer and Isolated Source/Drain

Punch-Through-Stopper Free Nanosheet FETs With Crescent Inner-Spacer and Isolated Source/Drain

Structural modifications of 5-nm node nanosheet FETs (NSFETs) were quantitatively analyzed using fully calibrated TCAD. The NSFETs with crescent inner spacer improve the short-channel effects by increasing effective gate lengths but also increase the parasitic capacitances by greater outer fringing...

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Bibliographic Details
Main Authors: Jun-Sik Yoon, Jinsu Jeong, Seunghwan Lee, Rock-Hyun Baek
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Access
Subjects:
5-nm node
bottom isolation
bottom transistor
crescent inner-spacer
nanosheet
slanted source/drain
Online Access:https://ieeexplore.ieee.org/document/8667408/

Internet

https://ieeexplore.ieee.org/document/8667408/

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