Effects of Oxygen Content on Operational Characteristics and Stability of High-Mobility IGTO Thin-Film Transistors during Channel Layer Deposition

Effects of Oxygen Content on Operational Characteristics and Stability of High-Mobility IGTO Thin-Film Transistors during Channel Layer Deposition

In this study, we investigated the effects of oxygen content on the transfer characteristics and stability of high-mobility indium-gallium-tin oxide (IGTO) thin-film transistors (TFTs) during channel layer deposition. The IGTO thin films were deposited through direct current sputtering at different...

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Bibliographic Details
Main Authors: Hwan-Seok Jeong, Hyun-Seok Cha, Seong-Hyun Hwang, Dong-Ho Lee, Sang-Hun Song, Hyuck-In Kwon
Format: Article
Language:English
Published: MDPI AG 2021-06-01
Series:Coatings
Subjects:
IGTO TFT
oxygen percentage
operation characteristics
stabilities
oxygen interstitial
oxygen vacancy
Online Access:https://www.mdpi.com/2079-6412/11/6/698

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https://www.mdpi.com/2079-6412/11/6/698

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