Electromagnetic interference shielding performance of nano-layered Ti3SiC2 ceramics at high-temperatures
The X-band electromagnetic interference (EMI) shielding properties of nano-layered Ti3SiC2 ceramics were evaluated from room temperature up to 800°C in order to explore the feasibility of Ti3SiC2 as efficient high temperature EMI shielding material. It was found that Ti3SiC2 exhibits satisfactory EM...
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doaj-472aca429af04fb2bfc39ac3f43ed3142020-11-25T00:18:45ZengAIP Publishing LLCAIP Advances2158-32262018-01-0181015027015027-610.1063/1.5012607084801ADVElectromagnetic interference shielding performance of nano-layered Ti3SiC2 ceramics at high-temperaturesSigong Li0Yongqiang Tan1Jiaxiang Xue2Tong Liu3Xiaosong Zhou4Haibin Zhang5Department of ATF R&D, China Nuclear Power Technology Research Institute, China General Nuclear Power Corporation (CGN), Shenzhen 518026, ChinaInnovation Research Team for Advanced Ceramics, Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, ChinaDepartment of ATF R&D, China Nuclear Power Technology Research Institute, China General Nuclear Power Corporation (CGN), Shenzhen 518026, ChinaDepartment of ATF R&D, China Nuclear Power Technology Research Institute, China General Nuclear Power Corporation (CGN), Shenzhen 518026, ChinaInnovation Research Team for Advanced Ceramics, Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, ChinaInnovation Research Team for Advanced Ceramics, Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, ChinaThe X-band electromagnetic interference (EMI) shielding properties of nano-layered Ti3SiC2 ceramics were evaluated from room temperature up to 800°C in order to explore the feasibility of Ti3SiC2 as efficient high temperature EMI shielding material. It was found that Ti3SiC2 exhibits satisfactory EMI shielding effectiveness (SE) close to 30 dB at room temperature and the EMI SE shows good temperature stability. The remarkable EMI shielding properties of Ti3SiC2 can be mainly attributed to high electrical conductivity, high dielectric loss and more importantly the multiple reflections due to the layered structure.http://dx.doi.org/10.1063/1.5012607 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Sigong Li Yongqiang Tan Jiaxiang Xue Tong Liu Xiaosong Zhou Haibin Zhang |
spellingShingle |
Sigong Li Yongqiang Tan Jiaxiang Xue Tong Liu Xiaosong Zhou Haibin Zhang Electromagnetic interference shielding performance of nano-layered Ti3SiC2 ceramics at high-temperatures AIP Advances |
author_facet |
Sigong Li Yongqiang Tan Jiaxiang Xue Tong Liu Xiaosong Zhou Haibin Zhang |
author_sort |
Sigong Li |
title |
Electromagnetic interference shielding performance of nano-layered Ti3SiC2 ceramics at high-temperatures |
title_short |
Electromagnetic interference shielding performance of nano-layered Ti3SiC2 ceramics at high-temperatures |
title_full |
Electromagnetic interference shielding performance of nano-layered Ti3SiC2 ceramics at high-temperatures |
title_fullStr |
Electromagnetic interference shielding performance of nano-layered Ti3SiC2 ceramics at high-temperatures |
title_full_unstemmed |
Electromagnetic interference shielding performance of nano-layered Ti3SiC2 ceramics at high-temperatures |
title_sort |
electromagnetic interference shielding performance of nano-layered ti3sic2 ceramics at high-temperatures |
publisher |
AIP Publishing LLC |
series |
AIP Advances |
issn |
2158-3226 |
publishDate |
2018-01-01 |
description |
The X-band electromagnetic interference (EMI) shielding properties of nano-layered Ti3SiC2 ceramics were evaluated from room temperature up to 800°C in order to explore the feasibility of Ti3SiC2 as efficient high temperature EMI shielding material. It was found that Ti3SiC2 exhibits satisfactory EMI shielding effectiveness (SE) close to 30 dB at room temperature and the EMI SE shows good temperature stability. The remarkable EMI shielding properties of Ti3SiC2 can be mainly attributed to high electrical conductivity, high dielectric loss and more importantly the multiple reflections due to the layered structure. |
url |
http://dx.doi.org/10.1063/1.5012607 |
work_keys_str_mv |
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