Electromagnetic interference shielding performance of nano-layered Ti3SiC2 ceramics at high-temperatures

The X-band electromagnetic interference (EMI) shielding properties of nano-layered Ti3SiC2 ceramics were evaluated from room temperature up to 800°C in order to explore the feasibility of Ti3SiC2 as efficient high temperature EMI shielding material. It was found that Ti3SiC2 exhibits satisfactory EM...

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Main Authors: Sigong Li, Yongqiang Tan, Jiaxiang Xue, Tong Liu, Xiaosong Zhou, Haibin Zhang
Format: Article
Language:English
Published: AIP Publishing LLC 2018-01-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5012607
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spelling doaj-472aca429af04fb2bfc39ac3f43ed3142020-11-25T00:18:45ZengAIP Publishing LLCAIP Advances2158-32262018-01-0181015027015027-610.1063/1.5012607084801ADVElectromagnetic interference shielding performance of nano-layered Ti3SiC2 ceramics at high-temperaturesSigong Li0Yongqiang Tan1Jiaxiang Xue2Tong Liu3Xiaosong Zhou4Haibin Zhang5Department of ATF R&D, China Nuclear Power Technology Research Institute, China General Nuclear Power Corporation (CGN), Shenzhen 518026, ChinaInnovation Research Team for Advanced Ceramics, Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, ChinaDepartment of ATF R&D, China Nuclear Power Technology Research Institute, China General Nuclear Power Corporation (CGN), Shenzhen 518026, ChinaDepartment of ATF R&D, China Nuclear Power Technology Research Institute, China General Nuclear Power Corporation (CGN), Shenzhen 518026, ChinaInnovation Research Team for Advanced Ceramics, Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, ChinaInnovation Research Team for Advanced Ceramics, Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, ChinaThe X-band electromagnetic interference (EMI) shielding properties of nano-layered Ti3SiC2 ceramics were evaluated from room temperature up to 800°C in order to explore the feasibility of Ti3SiC2 as efficient high temperature EMI shielding material. It was found that Ti3SiC2 exhibits satisfactory EMI shielding effectiveness (SE) close to 30 dB at room temperature and the EMI SE shows good temperature stability. The remarkable EMI shielding properties of Ti3SiC2 can be mainly attributed to high electrical conductivity, high dielectric loss and more importantly the multiple reflections due to the layered structure.http://dx.doi.org/10.1063/1.5012607
collection DOAJ
language English
format Article
sources DOAJ
author Sigong Li
Yongqiang Tan
Jiaxiang Xue
Tong Liu
Xiaosong Zhou
Haibin Zhang
spellingShingle Sigong Li
Yongqiang Tan
Jiaxiang Xue
Tong Liu
Xiaosong Zhou
Haibin Zhang
Electromagnetic interference shielding performance of nano-layered Ti3SiC2 ceramics at high-temperatures
AIP Advances
author_facet Sigong Li
Yongqiang Tan
Jiaxiang Xue
Tong Liu
Xiaosong Zhou
Haibin Zhang
author_sort Sigong Li
title Electromagnetic interference shielding performance of nano-layered Ti3SiC2 ceramics at high-temperatures
title_short Electromagnetic interference shielding performance of nano-layered Ti3SiC2 ceramics at high-temperatures
title_full Electromagnetic interference shielding performance of nano-layered Ti3SiC2 ceramics at high-temperatures
title_fullStr Electromagnetic interference shielding performance of nano-layered Ti3SiC2 ceramics at high-temperatures
title_full_unstemmed Electromagnetic interference shielding performance of nano-layered Ti3SiC2 ceramics at high-temperatures
title_sort electromagnetic interference shielding performance of nano-layered ti3sic2 ceramics at high-temperatures
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2018-01-01
description The X-band electromagnetic interference (EMI) shielding properties of nano-layered Ti3SiC2 ceramics were evaluated from room temperature up to 800°C in order to explore the feasibility of Ti3SiC2 as efficient high temperature EMI shielding material. It was found that Ti3SiC2 exhibits satisfactory EMI shielding effectiveness (SE) close to 30 dB at room temperature and the EMI SE shows good temperature stability. The remarkable EMI shielding properties of Ti3SiC2 can be mainly attributed to high electrical conductivity, high dielectric loss and more importantly the multiple reflections due to the layered structure.
url http://dx.doi.org/10.1063/1.5012607
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AT yongqiangtan electromagneticinterferenceshieldingperformanceofnanolayeredti3sic2ceramicsathightemperatures
AT jiaxiangxue electromagneticinterferenceshieldingperformanceofnanolayeredti3sic2ceramicsathightemperatures
AT tongliu electromagneticinterferenceshieldingperformanceofnanolayeredti3sic2ceramicsathightemperatures
AT xiaosongzhou electromagneticinterferenceshieldingperformanceofnanolayeredti3sic2ceramicsathightemperatures
AT haibinzhang electromagneticinterferenceshieldingperformanceofnanolayeredti3sic2ceramicsathightemperatures
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