Mosaic Structure Characterization of the AlInN Layer Grown on Sapphire Substrate

Mosaic Structure Characterization of the AlInN Layer Grown on Sapphire Substrate

The 150 nm thick, (0001) orientated wurtzite-phase Al1−xInxN epitaxial layers were grown by metal organic chemical vapor deposition on GaN (2.3 µm) template/(0001) sapphire substrate. The indium (x) concentration of the Al1−xInxN epitaxial layers was changed as 0.04, 0.18, 0.20, 0.47, and 0.48. The...

Full description

Bibliographic Details
Main Authors:	Engin Arslan, Pakize Demirel, Huseyin Çakmak, Mustafa K. Öztürk, Ekmel Ozbay
Format:	Article
Language:	English
Published:	Hindawi Limited 2014-01-01
Series:	Advances in Materials Science and Engineering
Online Access:	http://dx.doi.org/10.1155/2014/980639

Similar Items

Characterization of AlInN layer grown on GaN/Sapphire substrate by MOCVD
by: Wei-Ching Huang, et al.
Published: (2013)

Growth of GaN on lattice matched AlInN substrates
by: Boota, Muhammad, et al.
Published: (2008)

Effect of AlN Buffer Layer on the GaN Grown on Patterned Sapphire Substrate
by: 古皓齊
Published: (2016)

GaN Layer Grown on Pattern Sapphire Substrate with Oxide Spacer
by: Li,Jhih-Siang, et al.
Published: (2019)

The Study of GaN Thick Film Grown on Sapphire Substrate with PVD AlN Buffer Layer by HVPE
by: Sun, Chen-Yuan, et al.
Published: (2015)

Growth and Characterization of AlInN/AlN/GaN Heterostructures on 6-inch Si Substrates
by: Ji-Xian Chen, et al.
Published: (2016)

Wafer bonding with sputtered Alumium Indium Nitride (AlInN ) as an adhesive layer
by: 潘賢謚
Published: (2014)

Transient photoreflectance of AlInN/GaN heterostructures
by: S. Marcinkevičius, et al.
Published: (2012-12-01)

Reduction of dislocation density of aluminium nitride buffer layer grown on sapphire substrate
by: Jesbains, K., et al.
Published: (2016)

Optical Characterization of GaN Epitaxial Layer and LED Structure Grown on Patterned Sapphire Substrate
by: Jeff Yang, et al.
Published: (2005)

Analysis of microstructures and defects of GaN grown on sapphire substrates
by: Jyun-yu Li, et al.
Published: (2009)

Grown the GaInN blue LED on the patterned sapphire substrates
by: Chih-Ching Cheng, et al.

Growth and characterizations of GaN thin-film grown on AlN/graphene/sapphire substrates
by: Zhong-Yi Liang, et al.
Published: (2017)

Growth and characterization of reactive-sputtering AlInN thin films
by: Yeh, Tung-Sheng, et al.
Published: (2009)

Characteristics of Aluminum Nitride Films Grown on Sapphire Substrate
by: Ming-Sheng Wang, et al.
Published: (2014)

The optical properties of InN grown on nano-patterned sapphire substrate
by: Guan-Jang Lin, et al.

Characteristics of Al-doped ZnO films grown on (11-20) sapphire substrates using atomic layer deposition
by: Jyun-Syong Yang, et al.
Published: (2010)

Characteristics of ZnO films grown on (11-20) sapphire substrates by atomic layer deposition
by: Kuo-Yi Yen, et al.
Published: (2007)

Characteristics of ZnO films grown on (01-12) sapphire substrates by atomic layer deposition
by: Kuen-Yau Tsai, et al.

Quality-Improved GaN Epitaxial Layers Grown on Striped Patterned Sapphire Substrates Ablated by Femtosecond Laser
by: Yichao Xu, et al.
Published: (2018-10-01)

Epitaxial quality of GaN layer grown on c-sapphire substrate by plasma-assisted molecular beam epitaxy
by: Bo-Chi Chen, et al.

Analysis of the Mosaic Defects in Graded and Non Graded In<sub>x</sub>Ga<sub>1-x</sub>N Solar Cell Structures
by: İlknur KARS DURUKAN, et al.
Published: (2017-02-01)

Study of novel III-nitride semiconductor epitaxial growth of AlN and AlInN
by: Lin, Pei-Yin, et al.
Published: (2015)

Growth and Characterization of InGaN LEDs Grown on Patterned Sapphire Substrates
by: Shu-hei Lin, et al.
Published: (2006)

The Study of Non-Polar GaN Directly Grown on Sapphire Substrate by HVPE
by: Fang,Yao-De, et al.
Published: (2014)

GaN grown on {12-35} by using Dash Patterned Sapphire Substrate
by: Lin,Chia-Chen, et al.
Published: (2015)

Fabrication and Characterization of AlInN/GaN High Electron Mobility Transistors
by: Yu-Chuan Lin, et al.
Published: (2017)

Impurity diffusion in ion implanted AlN layers on sapphire substrates by thermal annealing
by: Okumura, Hironori, et al.
Published: (2022)

The X-Ray Study of GaN Buffer Layer Grown on Sapphire
by: Teng, Yao-Chung, et al.
Published: (1998)

Improvement of Epitaxy GaN Quality Using Nano-Patterned Sapphire Substrates and Grown Semipolar GaN Epilayer on a-Plane Patterned Sapphire Substrates
by: Hsieh, ChengYu, et al.
Published: (2012)

Reduction of Defects in AlGaN Grown on Nanoscale-Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy
by: Chi-Tsung Tasi, et al.
Published: (2017-05-01)

InGaN Ultraviolet Light-Emitting Diodes Grown on Patterned Sapphire Substrates
by: Chi-Hsun Hsieh, et al.
Published: (2007)

Simulation of InGaN solar cells grown on m-plane sapphire substrate
by: Ho, Sung-Hsun, et al.
Published: (2013)

Study of GaN-based LEDs grown on sapphire substrate with selectively diffused patterns
by: Kuo,Chung-Hao, et al.
Published: (101)

Structural analyses of the dislocations in wurtzite GaN films and AlGaN/GaN heterostructures grown on sapphire substrates
by: Wei-Lin Wang, et al.
Published: (2006)

Improved GaN quality by modifying sputter AlN buffer layer on pattern sapphire substrate
by: Kuo,Yen-Ting, et al.
Published: (2017)

Growth of GaN on Patterned AlN on Sapphire Substrate
by: Hung, Shang-Shih, et al.
Published: (2019)

Polarity inversion of AlN film grown on nitrided a-plane sapphire substrate with pulsed DC reactive sputtering
by: Marsetio Noorprajuda, et al.
Published: (2018-04-01)

Study of electronic transport parameters on the heterojunction of AlGaN/GaN, grown on Sapphire: two layer model
by: Sanju Shrestha, et al.
Published: (2018-11-01)

Development and characterization of AlInN as an alternating-current thin-film electroluminescent display phosphor
by: Mueller, Matthew R.
Published: (2012)

Cannot write session to /tmp/vufind_sessions/sess_annfck9jh3f7sijd3lieeou166