Multilevel resistive switching in TiO2/Al2O3 bilayers at low temperature

Multilevel resistive switching in TiO2/Al2O3 bilayers at low temperature

We report an approach to design a metal-insulator-metal (MIM) structure exhibiting multilevel resistive switching. Toward this end, two oxide layers (TiO2 and Al2O3) were combined to form a bilayer structure. MIM structures demonstrate stable bipolar switching relative to the resistive state determi...

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Bibliographic Details
Main Authors:	N. Andreeva, A. Ivanov, A. Petrov
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2018-02-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.5019570

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