Multilevel resistive switching in TiO2/Al2O3 bilayers at low temperature
We report an approach to design a metal-insulator-metal (MIM) structure exhibiting multilevel resistive switching. Toward this end, two oxide layers (TiO2 and Al2O3) were combined to form a bilayer structure. MIM structures demonstrate stable bipolar switching relative to the resistive state determi...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5019570 |