Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes

Organic non-volatile memories based on ferroelectric and semiconductor polymers are one of promising candidates for flexible electronics, yet the relevant device physics remains elusive. Ghittorelliet al. show that quantum tunnelling and charge accumulation govern the ferroelectric memory operation.

Bibliographic Details
Main Authors:	Matteo Ghittorelli, Thomas Lenz, Hamed Sharifi Dehsari, Dong Zhao, Kamal Asadi, Paul W. M. Blom, Zsolt M. Kovács-Vajna, Dago M. de Leeuw, Fabrizio Torricelli
Format:	Article
Language:	English
Published:	Nature Publishing Group 2017-06-01
Series:	Nature Communications
Online Access:	https://doi.org/10.1038/ncomms15841

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spelling	doaj-464354d529fc49dbaaf93d5fb8a788002021-05-11T07:52:08ZengNature Publishing GroupNature Communications2041-17232017-06-01811810.1038/ncomms15841Quantum tunnelling and charge accumulation in organic ferroelectric memory diodesMatteo Ghittorelli0Thomas Lenz1Hamed Sharifi Dehsari2Dong Zhao3Kamal Asadi4Paul W. M. Blom5Zsolt M. Kovács-Vajna6Dago M. de Leeuw7Fabrizio Torricelli8Department of Information Engineering, University of BresciaMax Planck Institute for Polymer ResearchMax Planck Institute for Polymer ResearchMax Planck Institute for Polymer ResearchMax Planck Institute for Polymer ResearchMax Planck Institute for Polymer ResearchDepartment of Information Engineering, University of BresciaMax Planck Institute for Polymer ResearchDepartment of Information Engineering, University of BresciaOrganic non-volatile memories based on ferroelectric and semiconductor polymers are one of promising candidates for flexible electronics, yet the relevant device physics remains elusive. Ghittorelliet al. show that quantum tunnelling and charge accumulation govern the ferroelectric memory operation.https://doi.org/10.1038/ncomms15841
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Matteo Ghittorelli Thomas Lenz Hamed Sharifi Dehsari Dong Zhao Kamal Asadi Paul W. M. Blom Zsolt M. Kovács-Vajna Dago M. de Leeuw Fabrizio Torricelli
spellingShingle	Matteo Ghittorelli Thomas Lenz Hamed Sharifi Dehsari Dong Zhao Kamal Asadi Paul W. M. Blom Zsolt M. Kovács-Vajna Dago M. de Leeuw Fabrizio Torricelli Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes Nature Communications
author_facet	Matteo Ghittorelli Thomas Lenz Hamed Sharifi Dehsari Dong Zhao Kamal Asadi Paul W. M. Blom Zsolt M. Kovács-Vajna Dago M. de Leeuw Fabrizio Torricelli
author_sort	Matteo Ghittorelli
title	Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes
title_short	Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes
title_full	Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes
title_fullStr	Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes
title_full_unstemmed	Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes
title_sort	quantum tunnelling and charge accumulation in organic ferroelectric memory diodes
publisher	Nature Publishing Group
series	Nature Communications
issn	2041-1723
publishDate	2017-06-01
description	Organic non-volatile memories based on ferroelectric and semiconductor polymers are one of promising candidates for flexible electronics, yet the relevant device physics remains elusive. Ghittorelliet al. show that quantum tunnelling and charge accumulation govern the ferroelectric memory operation.
url	https://doi.org/10.1038/ncomms15841
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Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes

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