Quantum simulation of the Hubbard model with dopant atoms in silicon
The goal of quantum simulation is to probe many-body phenomena in controlled systems, but Fermi-Hubbard phenomena are typically hard to simulate in cold atomic. Here, the authors simulate them with subsurface dopants in silicon, achieving a low effective temperature and reading out spin states with...
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Nature Publishing Group
2016-04-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/ncomms11342 |
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doaj-463a6d0695bf4a0991c08849bbfce74b2021-05-11T10:34:44ZengNature Publishing GroupNature Communications2041-17232016-04-01711610.1038/ncomms11342Quantum simulation of the Hubbard model with dopant atoms in siliconJ. Salfi0J. A. Mol1R. Rahman2G. Klimeck3M. Y. Simmons4L. C. L. Hollenberg5S. Rogge6Centre for Quantum Computation and Communication Technology, School of Physics, The University of New South WalesCentre for Quantum Computation and Communication Technology, School of Physics, The University of New South WalesDepartment of Electrical Engineering, Purdue UniversityDepartment of Electrical Engineering, Purdue UniversityCentre for Quantum Computation and Communication Technology, School of Physics, The University of New South WalesCentre for Quantum Computation and Communication Technology, School of Physics, University of MelbourneCentre for Quantum Computation and Communication Technology, School of Physics, The University of New South WalesThe goal of quantum simulation is to probe many-body phenomena in controlled systems, but Fermi-Hubbard phenomena are typically hard to simulate in cold atomic. Here, the authors simulate them with subsurface dopants in silicon, achieving a low effective temperature and reading out spin states with STM.https://doi.org/10.1038/ncomms11342 |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
J. Salfi J. A. Mol R. Rahman G. Klimeck M. Y. Simmons L. C. L. Hollenberg S. Rogge |
| spellingShingle |
J. Salfi J. A. Mol R. Rahman G. Klimeck M. Y. Simmons L. C. L. Hollenberg S. Rogge Quantum simulation of the Hubbard model with dopant atoms in silicon Nature Communications |
| author_facet |
J. Salfi J. A. Mol R. Rahman G. Klimeck M. Y. Simmons L. C. L. Hollenberg S. Rogge |
| author_sort |
J. Salfi |
| title |
Quantum simulation of the Hubbard model with dopant atoms in silicon |
| title_short |
Quantum simulation of the Hubbard model with dopant atoms in silicon |
| title_full |
Quantum simulation of the Hubbard model with dopant atoms in silicon |
| title_fullStr |
Quantum simulation of the Hubbard model with dopant atoms in silicon |
| title_full_unstemmed |
Quantum simulation of the Hubbard model with dopant atoms in silicon |
| title_sort |
quantum simulation of the hubbard model with dopant atoms in silicon |
| publisher |
Nature Publishing Group |
| series |
Nature Communications |
| issn |
2041-1723 |
| publishDate |
2016-04-01 |
| description |
The goal of quantum simulation is to probe many-body phenomena in controlled systems, but Fermi-Hubbard phenomena are typically hard to simulate in cold atomic. Here, the authors simulate them with subsurface dopants in silicon, achieving a low effective temperature and reading out spin states with STM. |
| url |
https://doi.org/10.1038/ncomms11342 |
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