Natural patterning of templates on GaAs by formation of cracks

Substrate pre-patterning is an effective way to overcome large lattice mismatch and suppress threading defects in the growth of heterostructures. In this work, a new concept was proposed to form natural patterns on commercial substrates monolithically by the formation of surface cracks. Tensile stra...

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Main Authors: Yuxin Song, Hao Xu, Yaoyao Li, Mahdad Sadeghi, Shumin Wang
Format: Article
Language:English
Published: AIP Publishing LLC 2015-06-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4922961
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spelling doaj-46324cb81ab6485bb44cfd7c59e10d782020-11-24T20:52:22ZengAIP Publishing LLCAIP Advances2158-32262015-06-0156067146067146-610.1063/1.4922961045506ADVNatural patterning of templates on GaAs by formation of cracksYuxin Song0Hao Xu1Yaoyao Li2Mahdad Sadeghi3Shumin Wang4State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, ChinaState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, ChinaState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, ChinaDepartment of Microtechnology and Nanoscience, Chalmers University of Technology, 41296, Gothenburg, SwedenState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, ChinaSubstrate pre-patterning is an effective way to overcome large lattice mismatch and suppress threading defects in the growth of heterostructures. In this work, a new concept was proposed to form natural patterns on commercial substrates monolithically by the formation of surface cracks. Tensile strain was intentionally brought in with a GaAs or GaNAs layer above an InGaAs layer on GaAs substrates. Surface crack patterns successfully formed during the strain relaxation. The strain in a 1 μm buffer layer atop the pattern was found effectively relaxed. Detailed residual strain distribution was simulated by the finite element method.http://dx.doi.org/10.1063/1.4922961
collection DOAJ
language English
format Article
sources DOAJ
author Yuxin Song
Hao Xu
Yaoyao Li
Mahdad Sadeghi
Shumin Wang
spellingShingle Yuxin Song
Hao Xu
Yaoyao Li
Mahdad Sadeghi
Shumin Wang
Natural patterning of templates on GaAs by formation of cracks
AIP Advances
author_facet Yuxin Song
Hao Xu
Yaoyao Li
Mahdad Sadeghi
Shumin Wang
author_sort Yuxin Song
title Natural patterning of templates on GaAs by formation of cracks
title_short Natural patterning of templates on GaAs by formation of cracks
title_full Natural patterning of templates on GaAs by formation of cracks
title_fullStr Natural patterning of templates on GaAs by formation of cracks
title_full_unstemmed Natural patterning of templates on GaAs by formation of cracks
title_sort natural patterning of templates on gaas by formation of cracks
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2015-06-01
description Substrate pre-patterning is an effective way to overcome large lattice mismatch and suppress threading defects in the growth of heterostructures. In this work, a new concept was proposed to form natural patterns on commercial substrates monolithically by the formation of surface cracks. Tensile strain was intentionally brought in with a GaAs or GaNAs layer above an InGaAs layer on GaAs substrates. Surface crack patterns successfully formed during the strain relaxation. The strain in a 1 μm buffer layer atop the pattern was found effectively relaxed. Detailed residual strain distribution was simulated by the finite element method.
url http://dx.doi.org/10.1063/1.4922961
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AT mahdadsadeghi naturalpatterningoftemplatesongaasbyformationofcracks
AT shuminwang naturalpatterningoftemplatesongaasbyformationofcracks
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