Natural patterning of templates on GaAs by formation of cracks
Substrate pre-patterning is an effective way to overcome large lattice mismatch and suppress threading defects in the growth of heterostructures. In this work, a new concept was proposed to form natural patterns on commercial substrates monolithically by the formation of surface cracks. Tensile stra...
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Online Access: | http://dx.doi.org/10.1063/1.4922961 |
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doaj-46324cb81ab6485bb44cfd7c59e10d782020-11-24T20:52:22ZengAIP Publishing LLCAIP Advances2158-32262015-06-0156067146067146-610.1063/1.4922961045506ADVNatural patterning of templates on GaAs by formation of cracksYuxin Song0Hao Xu1Yaoyao Li2Mahdad Sadeghi3Shumin Wang4State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, ChinaState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, ChinaState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, ChinaDepartment of Microtechnology and Nanoscience, Chalmers University of Technology, 41296, Gothenburg, SwedenState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050, Shanghai, ChinaSubstrate pre-patterning is an effective way to overcome large lattice mismatch and suppress threading defects in the growth of heterostructures. In this work, a new concept was proposed to form natural patterns on commercial substrates monolithically by the formation of surface cracks. Tensile strain was intentionally brought in with a GaAs or GaNAs layer above an InGaAs layer on GaAs substrates. Surface crack patterns successfully formed during the strain relaxation. The strain in a 1 μm buffer layer atop the pattern was found effectively relaxed. Detailed residual strain distribution was simulated by the finite element method.http://dx.doi.org/10.1063/1.4922961 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Yuxin Song Hao Xu Yaoyao Li Mahdad Sadeghi Shumin Wang |
spellingShingle |
Yuxin Song Hao Xu Yaoyao Li Mahdad Sadeghi Shumin Wang Natural patterning of templates on GaAs by formation of cracks AIP Advances |
author_facet |
Yuxin Song Hao Xu Yaoyao Li Mahdad Sadeghi Shumin Wang |
author_sort |
Yuxin Song |
title |
Natural patterning of templates on GaAs by formation of cracks |
title_short |
Natural patterning of templates on GaAs by formation of cracks |
title_full |
Natural patterning of templates on GaAs by formation of cracks |
title_fullStr |
Natural patterning of templates on GaAs by formation of cracks |
title_full_unstemmed |
Natural patterning of templates on GaAs by formation of cracks |
title_sort |
natural patterning of templates on gaas by formation of cracks |
publisher |
AIP Publishing LLC |
series |
AIP Advances |
issn |
2158-3226 |
publishDate |
2015-06-01 |
description |
Substrate pre-patterning is an effective way to overcome large lattice mismatch and suppress threading defects in the growth of heterostructures. In this work, a new concept was proposed to form natural patterns on commercial substrates monolithically by the formation of surface cracks. Tensile strain was intentionally brought in with a GaAs or GaNAs layer above an InGaAs layer on GaAs substrates. Surface crack patterns successfully formed during the strain relaxation. The strain in a 1 μm buffer layer atop the pattern was found effectively relaxed. Detailed residual strain distribution was simulated by the finite element method. |
url |
http://dx.doi.org/10.1063/1.4922961 |
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