Sensing Microwave-Terahertz Detectors Based on Metal-Semiconductor-Metal Structures With Symmetrical I–V Characteristic
We discuss the characteristics of new sensing elements based on a symmetrical metal-semiconductor-metal structure, which are designed for detection of microwave-terahertz signals. The schemes of connection of the sensing elements in the high-frequency path and the low-frequency measuring circuit are...
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| Language: | English |
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IEEE
2013-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/6477065/ |
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doaj-462fb894fd4842a3a99075a3b0c55c722021-03-29T18:41:58ZengIEEEIEEE Journal of the Electron Devices Society2168-67342013-01-0113768210.1109/JEDS.2013.22522356477065Sensing Microwave-Terahertz Detectors Based on Metal-Semiconductor-Metal Structures With Symmetrical I–V CharacteristicV. I. Shashkin0N. V. Vostokov1Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaInstitute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, RussiaWe discuss the characteristics of new sensing elements based on a symmetrical metal-semiconductor-metal structure, which are designed for detection of microwave-terahertz signals. The schemes of connection of the sensing elements in the high-frequency path and the low-frequency measuring circuit are considered. Expressions for the volt-watt sensitivity and the noise-equivalent power are obtained. Comparison of the obtained characteristics with those of the detector zero-bias Schottky (Mott)-barrier diode is carried out. It is shown that the characteristics of the symmetrical sensing elements are comparable with or exceed in some cases similar characteristics of the detector zero-bias diodes.https://ieeexplore.ieee.org/document/6477065/Metal-semiconductor-metal structuremicrowave-terahertz detectorschottky (Mott)-barrier transition |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
V. I. Shashkin N. V. Vostokov |
| spellingShingle |
V. I. Shashkin N. V. Vostokov Sensing Microwave-Terahertz Detectors Based on Metal-Semiconductor-Metal Structures With Symmetrical I–V Characteristic IEEE Journal of the Electron Devices Society Metal-semiconductor-metal structure microwave-terahertz detector schottky (Mott)-barrier transition |
| author_facet |
V. I. Shashkin N. V. Vostokov |
| author_sort |
V. I. Shashkin |
| title |
Sensing Microwave-Terahertz Detectors Based on Metal-Semiconductor-Metal Structures With Symmetrical I–V Characteristic |
| title_short |
Sensing Microwave-Terahertz Detectors Based on Metal-Semiconductor-Metal Structures With Symmetrical I–V Characteristic |
| title_full |
Sensing Microwave-Terahertz Detectors Based on Metal-Semiconductor-Metal Structures With Symmetrical I–V Characteristic |
| title_fullStr |
Sensing Microwave-Terahertz Detectors Based on Metal-Semiconductor-Metal Structures With Symmetrical I–V Characteristic |
| title_full_unstemmed |
Sensing Microwave-Terahertz Detectors Based on Metal-Semiconductor-Metal Structures With Symmetrical I–V Characteristic |
| title_sort |
sensing microwave-terahertz detectors based on metal-semiconductor-metal structures with symmetrical i–v characteristic |
| publisher |
IEEE |
| series |
IEEE Journal of the Electron Devices Society |
| issn |
2168-6734 |
| publishDate |
2013-01-01 |
| description |
We discuss the characteristics of new sensing elements based on a symmetrical metal-semiconductor-metal structure, which are designed for detection of microwave-terahertz signals. The schemes of connection of the sensing elements in the high-frequency path and the low-frequency measuring circuit are considered. Expressions for the volt-watt sensitivity and the noise-equivalent power are obtained. Comparison of the obtained characteristics with those of the detector zero-bias Schottky (Mott)-barrier diode is carried out. It is shown that the characteristics of the symmetrical sensing elements are comparable with or exceed in some cases similar characteristics of the detector zero-bias diodes. |
| topic |
Metal-semiconductor-metal structure microwave-terahertz detector schottky (Mott)-barrier transition |
| url |
https://ieeexplore.ieee.org/document/6477065/ |
| work_keys_str_mv |
AT vishashkin sensingmicrowaveterahertzdetectorsbasedonmetalsemiconductormetalstructureswithsymmetricalix2013vcharacteristic AT nvvostokov sensingmicrowaveterahertzdetectorsbasedonmetalsemiconductormetalstructureswithsymmetricalix2013vcharacteristic |
| _version_ |
1724196581155012608 |