Sensing Microwave-Terahertz Detectors Based on Metal-Semiconductor-Metal Structures With Symmetrical I–V Characteristic
We discuss the characteristics of new sensing elements based on a symmetrical metal-semiconductor-metal structure, which are designed for detection of microwave-terahertz signals. The schemes of connection of the sensing elements in the high-frequency path and the low-frequency measuring circuit are...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2013-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/6477065/ |
| Summary: | We discuss the characteristics of new sensing elements based on a symmetrical metal-semiconductor-metal structure, which are designed for detection of microwave-terahertz signals. The schemes of connection of the sensing elements in the high-frequency path and the low-frequency measuring circuit are considered. Expressions for the volt-watt sensitivity and the noise-equivalent power are obtained. Comparison of the obtained characteristics with those of the detector zero-bias Schottky (Mott)-barrier diode is carried out. It is shown that the characteristics of the symmetrical sensing elements are comparable with or exceed in some cases similar characteristics of the detector zero-bias diodes. |
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| ISSN: | 2168-6734 |