Sputter synthesis of wafer-scale hexagonal boron nitride films via interface segregation

Sputter synthesis of wafer-scale hexagonal boron nitride films via interface segregation

We demonstrated the crystal growth of wafer-scale hexagonal boron nitride (hBN) films on AlN template substrates by pulsed sputtering deposition using Fe catalysts. It was found that hBN films with high crystalline quality were formed at the hetero-interfaces between the Fe catalytic layers and the...

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Main Authors: Jitsuo Ohta, Hiroshi Fujioka
Format: Article
Language:English
Published: AIP Publishing LLC 2017-07-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.4995652
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spelling doaj-45a00d9583b24d3f949692f41e27141d2020-11-24T20:50:19ZengAIP Publishing LLCAPL Materials2166-532X2017-07-0157076107076107-510.1063/1.4995652009707APMSputter synthesis of wafer-scale hexagonal boron nitride films via interface segregationJitsuo Ohta0Hiroshi Fujioka1Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505, JapanInstitute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505, JapanWe demonstrated the crystal growth of wafer-scale hexagonal boron nitride (hBN) films on AlN template substrates by pulsed sputtering deposition using Fe catalysts. It was found that hBN films with high crystalline quality were formed at the hetero-interfaces between the Fe catalytic layers and the AlN templates. The full width at half maximum value of the E2g Raman spectrum for the hBN film was as small as 5.1 cm−1. The hBN film showed a highly c-axis-oriented structure and a strong near-band-edge deep ultraviolet emission at room temperature. The present results indicate that the sputter synthesis of hBN films via interface segregation opens a new pathway for the wafer-scale production of high-quality hBN films, and we envisage its potential applications in the fabrication of prospective hBN-based optoelectronic devices.http://dx.doi.org/10.1063/1.4995652
collection DOAJ
language English
format Article
sources DOAJ
author Jitsuo Ohta
Hiroshi Fujioka
spellingShingle Jitsuo Ohta
Hiroshi Fujioka
Sputter synthesis of wafer-scale hexagonal boron nitride films via interface segregation
APL Materials
author_facet Jitsuo Ohta
Hiroshi Fujioka
author_sort Jitsuo Ohta
title Sputter synthesis of wafer-scale hexagonal boron nitride films via interface segregation
title_short Sputter synthesis of wafer-scale hexagonal boron nitride films via interface segregation
title_full Sputter synthesis of wafer-scale hexagonal boron nitride films via interface segregation
title_fullStr Sputter synthesis of wafer-scale hexagonal boron nitride films via interface segregation
title_full_unstemmed Sputter synthesis of wafer-scale hexagonal boron nitride films via interface segregation
title_sort sputter synthesis of wafer-scale hexagonal boron nitride films via interface segregation
publisher AIP Publishing LLC
series APL Materials
issn 2166-532X
publishDate 2017-07-01
description We demonstrated the crystal growth of wafer-scale hexagonal boron nitride (hBN) films on AlN template substrates by pulsed sputtering deposition using Fe catalysts. It was found that hBN films with high crystalline quality were formed at the hetero-interfaces between the Fe catalytic layers and the AlN templates. The full width at half maximum value of the E2g Raman spectrum for the hBN film was as small as 5.1 cm−1. The hBN film showed a highly c-axis-oriented structure and a strong near-band-edge deep ultraviolet emission at room temperature. The present results indicate that the sputter synthesis of hBN films via interface segregation opens a new pathway for the wafer-scale production of high-quality hBN films, and we envisage its potential applications in the fabrication of prospective hBN-based optoelectronic devices.
url http://dx.doi.org/10.1063/1.4995652
work_keys_str_mv AT jitsuoohta sputtersynthesisofwaferscalehexagonalboronnitridefilmsviainterfacesegregation
AT hiroshifujioka sputtersynthesisofwaferscalehexagonalboronnitridefilmsviainterfacesegregation
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