E‐band InAs quantum dot laser on InGaAs metamorphic buffer layer with filter layer
Abstract InAs quantum dots (QDs) are receiving attention as next‐generation E‐band light source that offers high‐temperature operation and temperature insensitive operation. However, high‐density crystal defects occur at the interface between the InGaAs buffer layer and GaAs, resulting in reduced de...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2021-07-01
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| Series: | Electronics Letters |
| Online Access: | https://doi.org/10.1049/ell2.12189 |