BPF-Based Thermal Sensor Circuit for On-Chip Testing of RF Circuits

A new sensor topology meant to extract figures of merit of radio-frequency analog integrated circuits (RF-ICs) was experimentally validated. Implemented in a standard 0.35 μm complementary metal-oxide-semiconductor (CMOS) technology, it comprised two blocks: a single metal-oxide-semiconductor (MOS)...

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Main Authors: Josep Altet, Enrique Barajas, Diego Mateo, Alexandre Billong, Xavier Aragones, Xavier Perpiñà, Ferran Reverter
Format: Article
Language:English
Published: MDPI AG 2021-01-01
Series:Sensors
Subjects:
Online Access:https://www.mdpi.com/1424-8220/21/3/805
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spelling doaj-4594b16652a54b5498d8442a7bdd93822021-01-27T00:01:00ZengMDPI AGSensors1424-82202021-01-012180580510.3390/s21030805BPF-Based Thermal Sensor Circuit for On-Chip Testing of RF CircuitsJosep Altet0Enrique Barajas1Diego Mateo2Alexandre Billong3Xavier Aragones4Xavier Perpiñà5Ferran Reverter6Electronic Engineering Department, Universitat Politècnica de Catalunya–BarcelonaTech, 08034 Barcelona, SpainElectronic Engineering Department, Universitat Politècnica de Catalunya–BarcelonaTech, 08034 Barcelona, SpainElectronic Engineering Department, Universitat Politècnica de Catalunya–BarcelonaTech, 08034 Barcelona, SpainElectronic Engineering Department, Universitat Politècnica de Catalunya–BarcelonaTech, 08034 Barcelona, SpainElectronic Engineering Department, Universitat Politècnica de Catalunya–BarcelonaTech, 08034 Barcelona, SpainInstitute of Microelectronics of Barcelona (IMB-CNM)—CSIC, 08193 Cerdanyola del Vallés, SpainElectronic Engineering Department, Universitat Politècnica de Catalunya–BarcelonaTech, 08034 Barcelona, SpainA new sensor topology meant to extract figures of merit of radio-frequency analog integrated circuits (RF-ICs) was experimentally validated. Implemented in a standard 0.35 μm complementary metal-oxide-semiconductor (CMOS) technology, it comprised two blocks: a single metal-oxide-semiconductor (MOS) transistor acting as temperature transducer, which was placed near the circuit to monitor, and an active band-pass filter amplifier. For validation purposes, the temperature sensor was integrated with a tuned radio-frequency power amplifier (420 MHz) and MOS transistors acting as controllable dissipating devices. First, using the MOS dissipating devices, the performance and limitations of the different blocks that constitute the temperature sensor were characterized. Second, by using the heterodyne technique (applying two nearby tones) to the power amplifier (PA) and connecting the sensor output voltage to a low-cost AC voltmeter, the PA’s output power and its central frequency were monitored. As a result, this topology resulted in a low-cost approach, with high linearity and sensitivity, for RF-IC testing and variability monitoring.https://www.mdpi.com/1424-8220/21/3/805CMOS thermal sensorCMOS built-in sensorCMOS integrated circuitsmeasurement of RF CMOS circuitsbuilt-in test and measurement
collection DOAJ
language English
format Article
sources DOAJ
author Josep Altet
Enrique Barajas
Diego Mateo
Alexandre Billong
Xavier Aragones
Xavier Perpiñà
Ferran Reverter
spellingShingle Josep Altet
Enrique Barajas
Diego Mateo
Alexandre Billong
Xavier Aragones
Xavier Perpiñà
Ferran Reverter
BPF-Based Thermal Sensor Circuit for On-Chip Testing of RF Circuits
Sensors
CMOS thermal sensor
CMOS built-in sensor
CMOS integrated circuits
measurement of RF CMOS circuits
built-in test and measurement
author_facet Josep Altet
Enrique Barajas
Diego Mateo
Alexandre Billong
Xavier Aragones
Xavier Perpiñà
Ferran Reverter
author_sort Josep Altet
title BPF-Based Thermal Sensor Circuit for On-Chip Testing of RF Circuits
title_short BPF-Based Thermal Sensor Circuit for On-Chip Testing of RF Circuits
title_full BPF-Based Thermal Sensor Circuit for On-Chip Testing of RF Circuits
title_fullStr BPF-Based Thermal Sensor Circuit for On-Chip Testing of RF Circuits
title_full_unstemmed BPF-Based Thermal Sensor Circuit for On-Chip Testing of RF Circuits
title_sort bpf-based thermal sensor circuit for on-chip testing of rf circuits
publisher MDPI AG
series Sensors
issn 1424-8220
publishDate 2021-01-01
description A new sensor topology meant to extract figures of merit of radio-frequency analog integrated circuits (RF-ICs) was experimentally validated. Implemented in a standard 0.35 μm complementary metal-oxide-semiconductor (CMOS) technology, it comprised two blocks: a single metal-oxide-semiconductor (MOS) transistor acting as temperature transducer, which was placed near the circuit to monitor, and an active band-pass filter amplifier. For validation purposes, the temperature sensor was integrated with a tuned radio-frequency power amplifier (420 MHz) and MOS transistors acting as controllable dissipating devices. First, using the MOS dissipating devices, the performance and limitations of the different blocks that constitute the temperature sensor were characterized. Second, by using the heterodyne technique (applying two nearby tones) to the power amplifier (PA) and connecting the sensor output voltage to a low-cost AC voltmeter, the PA’s output power and its central frequency were monitored. As a result, this topology resulted in a low-cost approach, with high linearity and sensitivity, for RF-IC testing and variability monitoring.
topic CMOS thermal sensor
CMOS built-in sensor
CMOS integrated circuits
measurement of RF CMOS circuits
built-in test and measurement
url https://www.mdpi.com/1424-8220/21/3/805
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