Study of electronic transport parameters on the heterojunction of AlGaN/GaN, grown on Sapphire: two layer model

Study of electronic transport parameters on the heterojunction of AlGaN/GaN, grown on Sapphire: two layer model

<p>In spatially confined system such as heterojunction of high and low band gap material, carriers are transferred from higher band gap to the lower band gap. It causes the band bending and the formation of a triangular quantum well at the junction. Such system behaves as quantum-two dimension...

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Bibliographic Details
Main Authors: Sanju Shrestha, Ambika Shakya, C K Sarkar
Format: Article
Language:English
Published: Department of Physics, Mahendra Morang Adarsh Multiple Campus, Tribhuvan University 2018-11-01
Series:Bibechana
Subjects:
Heterojunction
Quantum well
Two layer model
AlGaN/GaN
Online Access:https://www.nepjol.info/index.php/BIBECHANA/article/view/21072

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