A source drain symmetric and interchangeable bidirectional tunneling field effect transistor
A novel bidirectional tunneling field effect transistor with source drain symmetric and interchangeable functions (SDSI BT FET) is proposed in this work. Different from the conventional tunneling field effect transistors (TFET), once the absolute value of drain-to-source bias voltage is determined,...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5040536 |