CONTROL OF RESIDUAL STRESSES IN STRUCTURES SI-SIO<sub>2</sub>

CONTROL OF RESIDUAL STRESSES IN STRUCTURES SI-SIO<sub>2</sub>

The consideration is made of the ways leading to increasing the control of residual stresses in structures such as silicon dioxide-monocrystal silicon substrate. The results concerning the determination of the level of residual stresses in structures Si-SiO2 are presented.

Bibliographic Details
Main Author:	V. A. Zelenin
Format:	Article
Language:	Russian
Published:	Educational institution «Belarusian State University of Informatics and Radioelectronics» 2019-06-01
Series:	Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Online Access:	https://doklady.bsuir.by/jour/article/view/121

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