High temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasma

High temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasma

Reactive ion etching (RIE) technology for iridium with CF4/O2/Ar gas mixtures and aluminum mask at high temperatures up to 350 °C was developed. The influence of various process parameters such as gas mixing ratio and substrate temperature on the etch rate was studied in order to find optimal proces...

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Bibliographic Details
Main Authors:	Chia-Pin Yeh, Marco Lisker, Bodo Kalkofen, Edmund P. Burte
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2016-08-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.4961447

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