High temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasma

High temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasma

Reactive ion etching (RIE) technology for iridium with CF4/O2/Ar gas mixtures and aluminum mask at high temperatures up to 350 °C was developed. The influence of various process parameters such as gas mixing ratio and substrate temperature on the etch rate was studied in order to find optimal proces...

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Main Authors: Chia-Pin Yeh, Marco Lisker, Bodo Kalkofen, Edmund P. Burte
Format: Article
Language:English
Published: AIP Publishing LLC 2016-08-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4961447
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spelling doaj-440aae1c77f94da290d6dfa69a32a5fc2020-11-25T00:40:28ZengAIP Publishing LLCAIP Advances2158-32262016-08-0168085111085111-810.1063/1.4961447044608ADVHigh temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasmaChia-Pin Yeh0Marco Lisker1Bodo Kalkofen2Edmund P. Burte3Institute of Micro and Sensor Systems, Otto von Guericke University Magdeburg, Universitätsplatz 2, 39106, Magdeburg, GermanyIHP, Im Technologiepark 25, 15236 Frankfurt (Oder), GermanyInstitute of Micro and Sensor Systems, Otto von Guericke University Magdeburg, Universitätsplatz 2, 39106, Magdeburg, GermanyInstitute of Micro and Sensor Systems, Otto von Guericke University Magdeburg, Universitätsplatz 2, 39106, Magdeburg, GermanyReactive ion etching (RIE) technology for iridium with CF4/O2/Ar gas mixtures and aluminum mask at high temperatures up to 350 °C was developed. The influence of various process parameters such as gas mixing ratio and substrate temperature on the etch rate was studied in order to find optimal process conditions. The surface of the samples after etching was found to be clean under SEM inspection. It was also shown that the etch rate of iridium could be enhanced at higher process temperature and, at the same time, very high etching selectivity between aluminum etching mask and iridium could be achieved.http://dx.doi.org/10.1063/1.4961447
collection DOAJ
language English
format Article
sources DOAJ
author Chia-Pin Yeh
Marco Lisker
Bodo Kalkofen
Edmund P. Burte
spellingShingle Chia-Pin Yeh
Marco Lisker
Bodo Kalkofen
Edmund P. Burte
High temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasma
AIP Advances
author_facet Chia-Pin Yeh
Marco Lisker
Bodo Kalkofen
Edmund P. Burte
author_sort Chia-Pin Yeh
title High temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasma
title_short High temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasma
title_full High temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasma
title_fullStr High temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasma
title_full_unstemmed High temperature reactive ion etching of iridium thin films with aluminum mask in CF4/O2/Ar plasma
title_sort high temperature reactive ion etching of iridium thin films with aluminum mask in cf4/o2/ar plasma
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2016-08-01
description Reactive ion etching (RIE) technology for iridium with CF4/O2/Ar gas mixtures and aluminum mask at high temperatures up to 350 °C was developed. The influence of various process parameters such as gas mixing ratio and substrate temperature on the etch rate was studied in order to find optimal process conditions. The surface of the samples after etching was found to be clean under SEM inspection. It was also shown that the etch rate of iridium could be enhanced at higher process temperature and, at the same time, very high etching selectivity between aluminum etching mask and iridium could be achieved.
url http://dx.doi.org/10.1063/1.4961447
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AT marcolisker hightemperaturereactiveionetchingofiridiumthinfilmswithaluminummaskincf4o2arplasma
AT bodokalkofen hightemperaturereactiveionetchingofiridiumthinfilmswithaluminummaskincf4o2arplasma
AT edmundpburte hightemperaturereactiveionetchingofiridiumthinfilmswithaluminummaskincf4o2arplasma
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