Four Level Simulation of MOSFET
In this paper a software (MOSOFT) has been developed for 4-level simulation of MOSFETS. This software simulates the device characteristics up to micron channel length and includes long channel, short channel, subthreshold and field dependent mobility degradation models.
Main Authors: | , , |
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Format: | Article |
Language: | English |
Published: |
Hindawi Limited
1998-01-01
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Series: | Active and Passive Electronic Components |
Subjects: | |
Online Access: | http://dx.doi.org/10.1155/1998/38280 |
Summary: | In this paper a software (MOSOFT) has been developed for 4-level simulation of
MOSFETS. This software simulates the device characteristics up to micron channel
length and includes long channel, short channel, subthreshold and field dependent
mobility degradation models. |
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ISSN: | 0882-7516 1563-5031 |