Four Level Simulation of MOSFET

In this paper a software (MOSOFT) has been developed for 4-level simulation of MOSFETS. This software simulates the device characteristics up to micron channel length and includes long channel, short channel, subthreshold and field dependent mobility degradation models.

Bibliographic Details
Main Authors: M. N. Doja, Moinuddin, Umesh Kumar
Format: Article
Language:English
Published: Hindawi Limited 1998-01-01
Series:Active and Passive Electronic Components
Subjects:
Online Access:http://dx.doi.org/10.1155/1998/38280
Description
Summary:In this paper a software (MOSOFT) has been developed for 4-level simulation of MOSFETS. This software simulates the device characteristics up to micron channel length and includes long channel, short channel, subthreshold and field dependent mobility degradation models.
ISSN:0882-7516
1563-5031