On-Demand CMOS-Compatible Fabrication of Ultrathin Self-Aligned SiC Nanowire Arrays

The field of semiconductor nanowires (NWs) has become one of the most active and mature research areas. However, progress in this field has been limited, due to the difficulty in controlling the density, orientation, and placement of the individual NWs, parameters important for mass producing nanode...

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Main Authors: Natasha Tabassum, Mounika Kotha, Vidya Kaushik, Brian Ford, Sonal Dey, Edward Crawford, Vasileios Nikas, Spyros Gallis
Format: Article
Language:English
Published: MDPI AG 2018-11-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/8/11/906
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spelling doaj-439b39099bcb454eae2978a8ee34116f2020-11-25T02:11:07ZengMDPI AGNanomaterials2079-49912018-11-0181190610.3390/nano8110906nano8110906On-Demand CMOS-Compatible Fabrication of Ultrathin Self-Aligned SiC Nanowire ArraysNatasha Tabassum0Mounika Kotha1Vidya Kaushik2Brian Ford3Sonal Dey4Edward Crawford5Vasileios Nikas6Spyros Gallis7Colleges of Nanoscale Sciences and Engineering, SUNY Polytechnic Institute (SUNY Poly), Albany, NY 12203, USAColleges of Nanoscale Sciences and Engineering, SUNY Polytechnic Institute (SUNY Poly), Albany, NY 12203, USAColleges of Nanoscale Sciences and Engineering, SUNY Polytechnic Institute (SUNY Poly), Albany, NY 12203, USAColleges of Nanoscale Sciences and Engineering, SUNY Polytechnic Institute (SUNY Poly), Albany, NY 12203, USAColleges of Nanoscale Sciences and Engineering, SUNY Polytechnic Institute (SUNY Poly), Albany, NY 12203, USAGLOBALFOUNDRIES Corp., East Fishkill, NY 12533, USAColleges of Nanoscale Sciences and Engineering, SUNY Polytechnic Institute (SUNY Poly), Albany, NY 12203, USAColleges of Nanoscale Sciences and Engineering, SUNY Polytechnic Institute (SUNY Poly), Albany, NY 12203, USAThe field of semiconductor nanowires (NWs) has become one of the most active and mature research areas. However, progress in this field has been limited, due to the difficulty in controlling the density, orientation, and placement of the individual NWs, parameters important for mass producing nanodevices. The work presented herein describes a novel nanosynthesis strategy for ultrathin self-aligned silicon carbide (SiC) NW arrays (≤ 20 nm width, 130 nm height and 200⁻600 nm variable periodicity), with high quality (~2 Å surface roughness, ~2.4 eV optical bandgap) and reproducibility at predetermined locations, using fabrication protocols compatible with silicon microelectronics. Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, ultraviolet-visible spectroscopic ellipsometry, atomic force microscopy, X-ray diffractometry, and transmission electron microscopy studies show nanosynthesis of high-quality polycrystalline cubic 3C-SiC materials (average 5 nm grain size) with tailored properties. An extension of the nanofabrication process is presented for integrating technologically important erbium ions as emission centers at telecom C-band wavelengths. This integration allows for deterministic positioning of the ions and engineering of the ions’ spontaneous emission properties through the resulting NW-based photonic structures, both of which are critical to practical device fabrication for quantum information applications. This holistic approach can enable the development of new scalable SiC nanostructured materials for use in a plethora of emerging applications, such as NW-based sensing, single-photon sources, quantum LEDs, and quantum photonics.https://www.mdpi.com/2079-4991/8/11/906silicon carbideultrathin nanowiresnanofabricationself-aligned nanowirestelecom wavelengthsquantum photonics
collection DOAJ
language English
format Article
sources DOAJ
author Natasha Tabassum
Mounika Kotha
Vidya Kaushik
Brian Ford
Sonal Dey
Edward Crawford
Vasileios Nikas
Spyros Gallis
spellingShingle Natasha Tabassum
Mounika Kotha
Vidya Kaushik
Brian Ford
Sonal Dey
Edward Crawford
Vasileios Nikas
Spyros Gallis
On-Demand CMOS-Compatible Fabrication of Ultrathin Self-Aligned SiC Nanowire Arrays
Nanomaterials
silicon carbide
ultrathin nanowires
nanofabrication
self-aligned nanowires
telecom wavelengths
quantum photonics
author_facet Natasha Tabassum
Mounika Kotha
Vidya Kaushik
Brian Ford
Sonal Dey
Edward Crawford
Vasileios Nikas
Spyros Gallis
author_sort Natasha Tabassum
title On-Demand CMOS-Compatible Fabrication of Ultrathin Self-Aligned SiC Nanowire Arrays
title_short On-Demand CMOS-Compatible Fabrication of Ultrathin Self-Aligned SiC Nanowire Arrays
title_full On-Demand CMOS-Compatible Fabrication of Ultrathin Self-Aligned SiC Nanowire Arrays
title_fullStr On-Demand CMOS-Compatible Fabrication of Ultrathin Self-Aligned SiC Nanowire Arrays
title_full_unstemmed On-Demand CMOS-Compatible Fabrication of Ultrathin Self-Aligned SiC Nanowire Arrays
title_sort on-demand cmos-compatible fabrication of ultrathin self-aligned sic nanowire arrays
publisher MDPI AG
series Nanomaterials
issn 2079-4991
publishDate 2018-11-01
description The field of semiconductor nanowires (NWs) has become one of the most active and mature research areas. However, progress in this field has been limited, due to the difficulty in controlling the density, orientation, and placement of the individual NWs, parameters important for mass producing nanodevices. The work presented herein describes a novel nanosynthesis strategy for ultrathin self-aligned silicon carbide (SiC) NW arrays (≤ 20 nm width, 130 nm height and 200⁻600 nm variable periodicity), with high quality (~2 Å surface roughness, ~2.4 eV optical bandgap) and reproducibility at predetermined locations, using fabrication protocols compatible with silicon microelectronics. Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, ultraviolet-visible spectroscopic ellipsometry, atomic force microscopy, X-ray diffractometry, and transmission electron microscopy studies show nanosynthesis of high-quality polycrystalline cubic 3C-SiC materials (average 5 nm grain size) with tailored properties. An extension of the nanofabrication process is presented for integrating technologically important erbium ions as emission centers at telecom C-band wavelengths. This integration allows for deterministic positioning of the ions and engineering of the ions’ spontaneous emission properties through the resulting NW-based photonic structures, both of which are critical to practical device fabrication for quantum information applications. This holistic approach can enable the development of new scalable SiC nanostructured materials for use in a plethora of emerging applications, such as NW-based sensing, single-photon sources, quantum LEDs, and quantum photonics.
topic silicon carbide
ultrathin nanowires
nanofabrication
self-aligned nanowires
telecom wavelengths
quantum photonics
url https://www.mdpi.com/2079-4991/8/11/906
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