Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices

Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices

This paper proposes and develops a new technique based on low temperature conductance method to quantitatively evaluate the trap densities around NiGe/Ge Schottky junction interface and their time constants. It is found that the Schottky barrier height (SBH) in the NiGe/Ge junction is related with t...

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Bibliographic Details
Main Authors: Junkang Li, Zhuo Chen, Yiming Qu, Rui Zhang
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Germanium
Schottky junction
traps around junction interface
low temperature conductance method
Online Access:https://ieeexplore.ieee.org/document/9040567/
Description
Summary:This paper proposes and develops a new technique based on low temperature conductance method to quantitatively evaluate the trap densities around NiGe/Ge Schottky junction interface and their time constants. It is found that the Schottky barrier height (SBH) in the NiGe/Ge junction is related with these junction traps. Additionally, the traps around junction interface could strongly affect the electrical properties of Ge MOSFETs, especially the OFF-state currents.
ISSN:2168-6734

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