Liquid Level Sensing using Planar Inter-digitated Electrodes Employing CMOS Process

Liquid Level Sensing using Planar Inter-digitated Electrodes Employing CMOS Process

This article details liquid level sensing utilizing interdigitated electrodes topology fabricated using CMOS process steps. Layer of silicon strip with multiple electrodes is employed for characterization of different liquids based on the principle of capacitance change and thereby relative dielectr...

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Main Authors: B. N. BALIGA, Kamaljeet SINGH, V. Kavitha, Navneet VERMA, M. M. NAYAK, K. Nagachenchaiah, V. K. Lakshmeesha
Format: Article
Language:English
Published: IFSA Publishing, S.L. 2015-03-01
Series:Sensors & Transducers
Subjects:
Inter-digital topology
Liquid level sensor
CMOS process
silicon substrate.
Online Access:http://www.sensorsportal.com/HTML/DIGEST/march_2015/Vol_186/P_2626.pdf
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spelling doaj-421d84a1b2e6491bbf89e1a766ccbab92020-11-24T22:01:50ZengIFSA Publishing, S.L.Sensors & Transducers2306-85151726-54792015-03-0118637984 Liquid Level Sensing using Planar Inter-digitated Electrodes Employing CMOS ProcessB. N. BALIGA0Kamaljeet SINGH1V. Kavitha2Navneet VERMA3M. M. NAYAK4K. Nagachenchaiah5V. K. Lakshmeesha6ISRO Satellite Centre, ISRO, DOS, HAL airport Road, Bangaluru-560078, India Semiconductor Laboratory, Sector 72, S.A.S Nagar, Chandigrah-160071, IndiaSemiconductor Laboratory, Sector 72, S.A.S Nagar, Chandigrah-160071, IndiaSemiconductor Laboratory, Sector 72, S.A.S Nagar, Chandigrah-160071, IndiaSemiconductor Laboratory, Sector 72, S.A.S Nagar, Chandigrah-160071, IndiaSemiconductor Laboratory, Sector 72, S.A.S Nagar, Chandigrah-160071, IndiaISRO Satellite Centre, ISRO, DOS, HAL airport Road, Bangaluru-560078, India This article details liquid level sensing utilizing interdigitated electrodes topology fabricated using CMOS process steps. Layer of silicon strip with multiple electrodes is employed for characterization of different liquids based on the principle of capacitance change and thereby relative dielectric constant. Optimization of oxide thickness is carried out to minimize substrate capacitance effect. Fabricated strip is assembled, packaged and integrated with electronic circuitry. This handy device can be employed to characterize various liquids along with level sensing of the storage tank with electronic display. Various liquid levels are characterized by employing the proposed structure. http://www.sensorsportal.com/HTML/DIGEST/march_2015/Vol_186/P_2626.pdfInter-digital topologyLiquid level sensorCMOS processsilicon substrate.
collection DOAJ
language English
format Article
sources DOAJ
author B. N. BALIGA
Kamaljeet SINGH
V. Kavitha
Navneet VERMA
M. M. NAYAK
K. Nagachenchaiah
V. K. Lakshmeesha
spellingShingle B. N. BALIGA
Kamaljeet SINGH
V. Kavitha
Navneet VERMA
M. M. NAYAK
K. Nagachenchaiah
V. K. Lakshmeesha
Liquid Level Sensing using Planar Inter-digitated Electrodes Employing CMOS Process
Sensors & Transducers
Inter-digital topology
Liquid level sensor
CMOS process
silicon substrate.
author_facet B. N. BALIGA
Kamaljeet SINGH
V. Kavitha
Navneet VERMA
M. M. NAYAK
K. Nagachenchaiah
V. K. Lakshmeesha
author_sort B. N. BALIGA
title Liquid Level Sensing using Planar Inter-digitated Electrodes Employing CMOS Process
title_short Liquid Level Sensing using Planar Inter-digitated Electrodes Employing CMOS Process
title_full Liquid Level Sensing using Planar Inter-digitated Electrodes Employing CMOS Process
title_fullStr Liquid Level Sensing using Planar Inter-digitated Electrodes Employing CMOS Process
title_full_unstemmed Liquid Level Sensing using Planar Inter-digitated Electrodes Employing CMOS Process
title_sort liquid level sensing using planar inter-digitated electrodes employing cmos process
publisher IFSA Publishing, S.L.
series Sensors & Transducers
issn 2306-8515
1726-5479
publishDate 2015-03-01
description This article details liquid level sensing utilizing interdigitated electrodes topology fabricated using CMOS process steps. Layer of silicon strip with multiple electrodes is employed for characterization of different liquids based on the principle of capacitance change and thereby relative dielectric constant. Optimization of oxide thickness is carried out to minimize substrate capacitance effect. Fabricated strip is assembled, packaged and integrated with electronic circuitry. This handy device can be employed to characterize various liquids along with level sensing of the storage tank with electronic display. Various liquid levels are characterized by employing the proposed structure.
topic Inter-digital topology
Liquid level sensor
CMOS process
silicon substrate.
url http://www.sensorsportal.com/HTML/DIGEST/march_2015/Vol_186/P_2626.pdf
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AT navneetverma liquidlevelsensingusingplanarinterdigitatedelectrodesemployingcmosprocess
AT mmnayak liquidlevelsensingusingplanarinterdigitatedelectrodesemployingcmosprocess
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