| Summary: | In this study, the impact of the negative capacitance (NC) effect on process-induced variations, such as work function variation (WFV), random dopant fluctuation (RDF), and line edge roughness (LER), was investigated and compared to those of the baseline junctionless nanowire FET (JL-NWFET) in both linear (V<sub>ds</sub> = 0.05 V) and saturation (V<sub>ds</sub> = 0.5 V) modes. Sentaurus TCAD and MATLAB were used for the simulation of the baseline JL-NWFET and negative capacitance JL-NWFET (NC-JL-NWFET). Owing to the NC effect, the NC-JL-NWFET showed less variation in terms of device performance, such as σ[V<sub>t</sub>], σ[SS], σ[I<sub>on</sub>/I<sub>off</sub>], σ[V<sub>t</sub>]/µ[V<sub>t</sub>], σ[SS]/µ[SS], and σ[I<sub>on</sub>/I<sub>off</sub>]/µ[I<sub>on</sub>/I<sub>off</sub>], and enhanced device performance, which implies that the NC effect can successfully control the variation-induced degradation.
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