Towards Quantitative Interpretation of Fourier-Transform Photocurrent Spectroscopy on Thin-Film Solar Cells
The method of detecting deep defects in photovoltaic materials by Fourier-Transform Photocurrent Spectroscopy has gone through continuous development during the last two decades. Still, giving quantitative predictions of photovoltaic device performance is a challenging task. As new materials appear,...
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doaj-41b5eccc1505458ca1e980171cd6412f2020-11-25T03:21:28ZengMDPI AGCoatings2079-64122020-08-011082082010.3390/coatings10090820Towards Quantitative Interpretation of Fourier-Transform Photocurrent Spectroscopy on Thin-Film Solar CellsJakub Holovský0Michael Stuckelberger1Tomáš Finsterle2Brianna Conrad3Amalraj Peter Amalathas4Martin Müller5Franz-Josef Haug6Centre for Advanced Photovoltaics, Faculty of Electrical Engineering, Czech Technical University in Prague, Technická 2, 16627 Prague, Czech RepublicDeutsches Elektronen-Synchrotron DESY, Notkestr. 85, 22607 Hamburg, GermanyCentre for Advanced Photovoltaics, Faculty of Electrical Engineering, Czech Technical University in Prague, Technická 2, 16627 Prague, Czech RepublicCentre for Advanced Photovoltaics, Faculty of Electrical Engineering, Czech Technical University in Prague, Technická 2, 16627 Prague, Czech RepublicCentre for Advanced Photovoltaics, Faculty of Electrical Engineering, Czech Technical University in Prague, Technická 2, 16627 Prague, Czech RepublicInstitute of Physics, Czech Academy of Sciences, Cukrovarnická 10, 16200 Prague, Czech RepublicPhotovoltaic and Thin-Film Electronics Laboratory, Institute of Microengineering (IMT), École Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, 2002 Neuchâtel, SwitzerlandThe method of detecting deep defects in photovoltaic materials by Fourier-Transform Photocurrent Spectroscopy has gone through continuous development during the last two decades. Still, giving quantitative predictions of photovoltaic device performance is a challenging task. As new materials appear, a prediction of potentially achievable open-circuit voltage with respect to bandgap is highly desirable. From thermodynamics, a prediction can be made based on the radiative limit, neglecting non-radiative recombination and carrier transport effects. Beyond this, more accurate analysis has to be done. First, the absolute defect density has to be calculated, taking into account optical effects, such as absorption enhancement, due to scattering. Secondly, the electrical effect of thickness variation has to be addressed. We analyzed a series of state-of-the-art hydrogenated amorphous silicon solar cells of different thicknesses at different states of light soaking degradation. Based on a combination of empirical results with optical, electrical and thermodynamic simulations, we provide a predictive model of the open-circuit voltage of a device with a given defect density and absorber thickness. We observed that, rather than the defect density or thickness alone, it is their product or the total number of defects, that matters. Alternatively, including defect absorption into the thermodynamic radiative limit gives close upper bounds to the open-circuit voltage with the advantage of a much easier evaluation.https://www.mdpi.com/2079-6412/10/9/820solar cellsphotocurrent spectroscopydefect densityamorphous siliconopen-circuit voltageradiative limit |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Jakub Holovský Michael Stuckelberger Tomáš Finsterle Brianna Conrad Amalraj Peter Amalathas Martin Müller Franz-Josef Haug |
spellingShingle |
Jakub Holovský Michael Stuckelberger Tomáš Finsterle Brianna Conrad Amalraj Peter Amalathas Martin Müller Franz-Josef Haug Towards Quantitative Interpretation of Fourier-Transform Photocurrent Spectroscopy on Thin-Film Solar Cells Coatings solar cells photocurrent spectroscopy defect density amorphous silicon open-circuit voltage radiative limit |
author_facet |
Jakub Holovský Michael Stuckelberger Tomáš Finsterle Brianna Conrad Amalraj Peter Amalathas Martin Müller Franz-Josef Haug |
author_sort |
Jakub Holovský |
title |
Towards Quantitative Interpretation of Fourier-Transform Photocurrent Spectroscopy on Thin-Film Solar Cells |
title_short |
Towards Quantitative Interpretation of Fourier-Transform Photocurrent Spectroscopy on Thin-Film Solar Cells |
title_full |
Towards Quantitative Interpretation of Fourier-Transform Photocurrent Spectroscopy on Thin-Film Solar Cells |
title_fullStr |
Towards Quantitative Interpretation of Fourier-Transform Photocurrent Spectroscopy on Thin-Film Solar Cells |
title_full_unstemmed |
Towards Quantitative Interpretation of Fourier-Transform Photocurrent Spectroscopy on Thin-Film Solar Cells |
title_sort |
towards quantitative interpretation of fourier-transform photocurrent spectroscopy on thin-film solar cells |
publisher |
MDPI AG |
series |
Coatings |
issn |
2079-6412 |
publishDate |
2020-08-01 |
description |
The method of detecting deep defects in photovoltaic materials by Fourier-Transform Photocurrent Spectroscopy has gone through continuous development during the last two decades. Still, giving quantitative predictions of photovoltaic device performance is a challenging task. As new materials appear, a prediction of potentially achievable open-circuit voltage with respect to bandgap is highly desirable. From thermodynamics, a prediction can be made based on the radiative limit, neglecting non-radiative recombination and carrier transport effects. Beyond this, more accurate analysis has to be done. First, the absolute defect density has to be calculated, taking into account optical effects, such as absorption enhancement, due to scattering. Secondly, the electrical effect of thickness variation has to be addressed. We analyzed a series of state-of-the-art hydrogenated amorphous silicon solar cells of different thicknesses at different states of light soaking degradation. Based on a combination of empirical results with optical, electrical and thermodynamic simulations, we provide a predictive model of the open-circuit voltage of a device with a given defect density and absorber thickness. We observed that, rather than the defect density or thickness alone, it is their product or the total number of defects, that matters. Alternatively, including defect absorption into the thermodynamic radiative limit gives close upper bounds to the open-circuit voltage with the advantage of a much easier evaluation. |
topic |
solar cells photocurrent spectroscopy defect density amorphous silicon open-circuit voltage radiative limit |
url |
https://www.mdpi.com/2079-6412/10/9/820 |
work_keys_str_mv |
AT jakubholovsky towardsquantitativeinterpretationoffouriertransformphotocurrentspectroscopyonthinfilmsolarcells AT michaelstuckelberger towardsquantitativeinterpretationoffouriertransformphotocurrentspectroscopyonthinfilmsolarcells AT tomasfinsterle towardsquantitativeinterpretationoffouriertransformphotocurrentspectroscopyonthinfilmsolarcells AT briannaconrad towardsquantitativeinterpretationoffouriertransformphotocurrentspectroscopyonthinfilmsolarcells AT amalrajpeteramalathas towardsquantitativeinterpretationoffouriertransformphotocurrentspectroscopyonthinfilmsolarcells AT martinmuller towardsquantitativeinterpretationoffouriertransformphotocurrentspectroscopyonthinfilmsolarcells AT franzjosefhaug towardsquantitativeinterpretationoffouriertransformphotocurrentspectroscopyonthinfilmsolarcells |
_version_ |
1724614375872921600 |