Investigation of the High Mobility IGZO Thin Films by Using Co-Sputtering Method

Investigation of the High Mobility IGZO Thin Films by Using Co-Sputtering Method

High transmittance ratio in visible range, low resistivity, and high mobility of IGZO thin films were prepared at room temperature for 30 min by co-sputtering of Zn2Ga2O5 (Ga2O3 + 2 ZnO, GZO) ceramic and In2O3 ceramic at the same time. The deposition power of pure In2O3 ceramic target was fixed at 1...

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Bibliographic Details
Main Authors: Chao-Ming Hsu, Wen-Cheng Tzou, Cheng-Fu Yang, Yu-Jhen Liou
Format: Article
Language:English
Published: MDPI AG 2015-05-01
Series:Materials
Subjects:
IGZO
co-sputtering method
deposition power
SIMS
Online Access:http://www.mdpi.com/1996-1944/8/5/2769

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