Laser slicing: A thin film lift-off method for GaN-on-GaN technology

Laser slicing: A thin film lift-off method for GaN-on-GaN technology

A femtosecond laser focused inside bulk GaN was used to slice a thin GaN film with an epitaxial device structure from a bulk GaN substrate. The demonstrated laser slicing lift-off process did not require any special release layers in the epitaxial structure. GaN film with a thickness of 5 μm and an...

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Bibliographic Details
Main Authors:	Vladislav Voronenkov, Natalia Bochkareva, Ruslan Gorbunov, Andrey Zubrilov, Viktor Kogotkov, Philipp Latyshev, Yuri Lelikov, Andrey Leonidov, Yuri Shreter
Format:	Article
Language:	English
Published:	Elsevier 2019-06-01
Series:	Results in Physics
Online Access:	http://www.sciencedirect.com/science/article/pii/S2211379719305923

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