Controllable Vapor Growth of Large-Area Aligned CdS x Se1−x Nanowires for Visible Range Integratable Photodetectors

Controllable Vapor Growth of Large-Area Aligned CdS x Se1−x Nanowires for Visible Range Integratable Photodetectors

Abstract The controllable growth of large area band gap engineered-semiconductor nanowires (NWs) with precise orientation and position is of immense significance in the development of integrated optoelectronic devices. In this study, we have achieved large area in-plane-aligned CdS x Se1−x nanowires...

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Bibliographic Details
Main Authors: Muhammad Shoaib, Xiaoxia Wang, Xuehong Zhang, Qinglin Zhang, Anlian Pan
Format: Article
Language:English
Published: SpringerOpen 2018-06-01
Series:Nano-Micro Letters
Subjects:
Graphoepitaxial effect
Bandgap engineering
CdS x Se1−x nanowires
Optical waveguide
Photodetectors
Online Access:http://link.springer.com/article/10.1007/s40820-018-0211-7

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http://link.springer.com/article/10.1007/s40820-018-0211-7

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