Reflectively Coupled Waveguide Photodetector for High Speed Optical Interconnection
To fully utilize GaAs high drift mobility, techniques to monolithically integrate In0.53Ga0.47As p-i-n photodetectors with GaAs based optical waveguides using total internal reflection coupling are reviewed. Metal coplanar waveguides, deposited on top of the polyimide layer for the photodetector’s p...
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| Format: | Article |
| Language: | English |
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MDPI AG
2010-12-01
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| Series: | Sensors |
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| Online Access: | http://www.mdpi.com/1424-8220/10/12/10863/ |