Influence of 2 MeV electrons irradiation on gallium phosphide light-emitting diodes reverse currents

Influence of 2 MeV electrons irradiation on gallium phosphide light-emitting diodes reverse currents

Results of reverse electrophysical characteristics study of red and green LEDs, initial and irradiated with 2 MeV electrons were given. It was found that reverse current was predominantly caused by carriers tunneling at Urev ≤ 9 V, and by the avalanche multiplication at Urev ≥ 13 V, in the range U =...

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Bibliographic Details
Main Authors: V. G. Vorobiov, O. V. Konoreva, Ye. V. Malyi, M. B. Pinkovska, V. P. Tartachnyk, V. V. Shlapatska
Format: Article
Language:English
Published: Institute for Nuclear Research, National Academy of Sciences of Ukraine 2015-10-01
Series:Âderna Fìzika ta Energetika
Subjects:
gallium phosphide
GaP
light-emitting diode
irradiation
electrons
current-voltage characteristics
reverse current
breakdown
Online Access:http://jnpae.kinr.kiev.ua/16.3/html/16.3.0238.html

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